Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic
Research Article
SiC Semiconductor Applications - An Air Force Perspective
-
- Published online by Cambridge University Press:
- 15 February 2011, 3
-
- Article
- Export citation
SiC Power Devices
-
- Published online by Cambridge University Press:
- 15 February 2011, 9
-
- Article
- Export citation
Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD
-
- Published online by Cambridge University Press:
- 15 February 2011, 23
-
- Article
- Export citation
Investigation of an NEA Diamond Vacuum Microtriode Array
-
- Published online by Cambridge University Press:
- 15 February 2011, 33
-
- Article
- Export citation
Tetrahedral Amorphous Carbon Thin Film Transistors
-
- Published online by Cambridge University Press:
- 15 February 2011, 39
-
- Article
- Export citation
Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio
-
- Published online by Cambridge University Press:
- 15 February 2011, 45
-
- Article
- Export citation
OBIC Measurements on 6H-SiC Schottky Diodes
-
- Published online by Cambridge University Press:
- 15 February 2011, 51
-
- Article
- Export citation
Defect Dominant Junction Characteristics of 4H-SiC p+/n Diodes
-
- Published online by Cambridge University Press:
- 15 February 2011, 57
-
- Article
- Export citation
Fabrication of Highly Oriented, Smooth Diamond Films on Silicon for Electronic Devices
-
- Published online by Cambridge University Press:
- 15 February 2011, 63
-
- Article
- Export citation
Radiative Recombination Rates in GaN, InN, AlN and their Solid Solutions
-
- Published online by Cambridge University Press:
- 15 February 2011, 69
-
- Article
- Export citation
Pyroelectric Effect in Wurtzite Gallium Nitride
-
- Published online by Cambridge University Press:
- 15 February 2011, 75
-
- Article
- Export citation
CVD Diamond Wires as X-Ray Detectors
-
- Published online by Cambridge University Press:
- 15 February 2011, 81
-
- Article
- Export citation
Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures
-
- Published online by Cambridge University Press:
- 15 February 2011, 87
-
- Article
- Export citation
High-Temperature Switching Characteristics of 6H-SiC Thyristor
-
- Published online by Cambridge University Press:
- 15 February 2011, 93
-
- Article
- Export citation
Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique
-
- Published online by Cambridge University Press:
- 15 February 2011, 99
-
- Article
- Export citation
Characterization of 4H-SiC JFETs for Use in Analog Amplifiers Capable of 723K Operation
-
- Published online by Cambridge University Press:
- 15 February 2011, 105
-
- Article
- Export citation
High Electric Field Breakdown of 4H-SiC PN Junction Diodes
-
- Published online by Cambridge University Press:
- 15 February 2011, 111
-
- Article
- Export citation
Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome
-
- Published online by Cambridge University Press:
- 15 February 2011, 119
-
- Article
- Export citation
Chemical and Structural Characterization of the Ni-Ti Alloy/6H-SiC Contacts
-
- Published online by Cambridge University Press:
- 15 February 2011, 125
-
- Article
- Export citation
Low Resistance Ohmic Contact on p-type GaN Grown by Plasma-Assisted Molecular Beam Epitaxy
-
- Published online by Cambridge University Press:
- 15 February 2011, 131
-
- Article
- Export citation