Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices
Research Article
500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage
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- 01 February 2011, 0955-I15-20
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Gadolinium and Oxygen co-doping of Gallium Nitride: an LSDA + U study
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- 01 February 2011, 0955-I01-05
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Thermodynamic Analysis of Impurities in the Sublimation Growth of AlN Single Crystals
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- 01 February 2011, 0955-I11-05
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Optical Transmission Measurements on MOCVD Grown GaMnN Films on Sapphire
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- 01 February 2011, 0955-I07-02
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Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE
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- 01 February 2011, 0955-I16-06
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Influence of Overheating Effect on Transport Properties of AlGaN/GaN Heterostructures
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- 01 February 2011, 0955-I15-27
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Optical Properties of Nearly Lattice-matched AlInN/GaN Single Quantum Wells with Varying Well-widths
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- 01 February 2011, 0955-I12-06
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The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy
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- 01 February 2011, 0955-I07-28
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Optical Properties of Undoped, n-Doped and p-Doped GaN/AlN Superlattices
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- 01 February 2011, 0955-I12-03
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Compound-source Molecular Beam Epitaxy of GaN on Si at Low Temperature Using GaN Powder and Ammonia as Sources
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- 01 February 2011, 0955-I07-23
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Localisation of Excitation in InGaN Epilayers and Quantum wells
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- 01 February 2011, 0955-I12-07
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Vertically Increasing Well Thickness and In Content in GaInN MQW's due to V-shaped Pits
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- 01 February 2011, 0955-I15-39
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Recessed Gate Processing for GaN/AlGaN-HEMTs
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- 01 February 2011, 0955-I15-49
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Low-Temperature Cathodoluminescence Mapping of Green, Blue, and UV GaInN/GaN LED Dies
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- 01 February 2011, 0955-I15-45
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The Influence of Device Structure on High-electric-field Effects and Reliability of AlGaN/GaN HFETs
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- 01 February 2011, 0955-I14-01
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Phonon Decay in GaN and AlN and Self-Heating in III-N Devices
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- 01 February 2011, 0955-I12-11
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High Resolution Transmission Electron Microscopy Study of Thermal Oxidation of Single Crystalline Aluminum Nitride
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- 01 February 2011, 0955-I09-01
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Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates
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- 01 February 2011, 0955-I11-04
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Titanium Nitride Epitaxy on Tungsten (100) by Sublimation Crystal Growth
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- 01 February 2011, 0955-I07-11
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Magnetic and Optical Properties of Eu-doped GaN
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- 01 February 2011, 0955-I15-01
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