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Greenland marine-terminating glacier area changes: 2000–2010
- Jason E. Box, David T. Decker
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- Journal:
- Annals of Glaciology / Volume 52 / Issue 59 / 2011
- Published online by Cambridge University Press:
- 14 September 2017, pp. 91-98
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Area changes at 39 of the widest Greenland marine-terminating glacier outlets are measured in consecutive annual end-of-melt-season Moderate Resolution Imaging Spectroradiometer (MODIS) scenes spanning ten annual intervals (2000–10). The rates of cumulative area change for glaciers and ice shelves are well represented by linear least-squares fits, R = –0.99 and R = –0.94, with average rates of –70 and –65km2 a–1, respectively. Collectively, during this decade, the 39 glaciers lost a cumulative area of 1368 km2. More than three-quarters of the total area change occurred north of 72˚N. The largest 11-year area change for a single glacier during the survey period is the 311km2 loss at Humboldt Glacier. The largest annual change for a single glacier was extreme compared with the others, where Petermann glacier retreated 17km between 3 and 5 August 2010. For the 10 year sample, on average, the count of glaciers retreating is twice that advancing. A larger distinction is evident considering area change, with the ratio of retreat and advance, on average, nine times the gain. For glaciers with ice shelves, we find no year with collective area gain. The area change data from this study are posted at: http://bprc.osu.edu/~jbox/data/GAC/
Contributors
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- By Aakash Agarwala, Linda S. Aglio, Rae M. Allain, Paul D. Allen, Houman Amirfarzan, Yasodananda Kumar Areti, Amit Asopa, Edwin G. Avery, Patricia R. Bachiller, Angela M. Bader, Rana Badr, Sibinka Bajic, David J. Baker, Sheila R. Barnett, Rena Beckerly, Lorenzo Berra, Walter Bethune, Sascha S. Beutler, Tarun Bhalla, Edward A. Bittner, Jonathan D. Bloom, Alina V. Bodas, Lina M. Bolanos-Diaz, Ruma R. Bose, Jan Boublik, John P. Broadnax, Jason C. Brookman, Meredith R. Brooks, Roland Brusseau, Ethan O. Bryson, Linda A. Bulich, Kenji Butterfield, William R. Camann, Denise M. Chan, Theresa S. Chang, Jonathan E. Charnin, Mark Chrostowski, Fred Cobey, Adam B. Collins, Mercedes A. Concepcion, Christopher W. Connor, Bronwyn Cooper, Jeffrey B. Cooper, Martha Cordoba-Amorocho, Stephen B. Corn, Darin J. Correll, Gregory J. Crosby, Lisa J. Crossley, Deborah J. Culley, Tomas Cvrk, Michael N. D'Ambra, Michael Decker, Daniel F. Dedrick, Mark Dershwitz, Francis X. Dillon, Pradeep Dinakar, Alimorad G. Djalali, D. John Doyle, Lambertus Drop, Ian F. Dunn, Theodore E. Dushane, Sunil Eappen, Thomas Edrich, Jesse M. Ehrenfeld, Jason M. Erlich, Lucinda L. Everett, Elliott S. Farber, Khaldoun Faris, Eddy M. Feliz, Massimo Ferrigno, Richard S. Field, Michael G. Fitzsimons, Hugh L. Flanagan Jr., Vladimir Formanek, Amanda A. Fox, John A. Fox, Gyorgy Frendl, Tanja S. Frey, Samuel M. Galvagno Jr., Edward R. Garcia, Jonathan D. Gates, Cosmin Gauran, Brian J. Gelfand, Simon Gelman, Alexander C. Gerhart, Peter Gerner, Omid Ghalambor, Christopher J. Gilligan, Christian D. Gonzalez, Noah E. Gordon, William B. Gormley, Thomas J. Graetz, Wendy L. Gross, Amit Gupta, James P. Hardy, Seetharaman Hariharan, Miriam Harnett, Philip M. Hartigan, Joaquim M. Havens, Bishr Haydar, Stephen O. Heard, James L. Helstrom, David L. Hepner, McCallum R. Hoyt, Robert N. Jamison, Karinne Jervis, Stephanie B. Jones, Swaminathan Karthik, Richard M. Kaufman, Shubjeet Kaur, Lee A. Kearse Jr., John C. Keel, Scott D. Kelley, Albert H. Kim, Amy L. Kim, Grace Y. Kim, Robert J. Klickovich, Robert M. Knapp, Bhavani S. Kodali, Rahul Koka, Alina Lazar, Laura H. Leduc, Stanley Leeson, Lisa R. Leffert, Scott A. LeGrand, Patricio Leyton, J. Lance Lichtor, John Lin, Alvaro A. Macias, Karan Madan, Sohail K. Mahboobi, Devi Mahendran, Christine Mai, Sayeed Malek, S. Rao Mallampati, Thomas J. Mancuso, Ramon Martin, Matthew C. Martinez, J. A. Jeevendra Martyn, Kai Matthes, Tommaso Mauri, Mary Ellen McCann, Shannon S. McKenna, Dennis J. McNicholl, Abdel-Kader Mehio, Thor C. Milland, Tonya L. K. Miller, John D. Mitchell, K. Annette Mizuguchi, Naila Moghul, David R. Moss, Ross J. Musumeci, Naveen Nathan, Ju-Mei Ng, Liem C. Nguyen, Ervant Nishanian, Martina Nowak, Ala Nozari, Michael Nurok, Arti Ori, Rafael A. Ortega, Amy J. Ortman, David Oxman, Arvind Palanisamy, Carlo Pancaro, Lisbeth Lopez Pappas, Benjamin Parish, Samuel Park, Deborah S. Pederson, Beverly K. Philip, James H. Philip, Silvia Pivi, Stephen D. Pratt, Douglas E. Raines, Stephen L. Ratcliff, James P. Rathmell, J. Taylor Reed, Elizabeth M. Rickerson, Selwyn O. Rogers Jr., Thomas M. Romanelli, William H. Rosenblatt, Carl E. Rosow, Edgar L. Ross, J. Victor Ryckman, Mônica M. Sá Rêgo, Nicholas Sadovnikoff, Warren S. Sandberg, Annette Y. Schure, B. Scott Segal, Navil F. Sethna, Swapneel K. Shah, Shaheen F. Shaikh, Fred E. Shapiro, Torin D. Shear, Prem S. Shekar, Stanton K. Shernan, Naomi Shimizu, Douglas C. Shook, Kamal K. Sikka, Pankaj K. Sikka, David A. Silver, Jeffrey H. Silverstein, Emily A. Singer, Ken Solt, Spiro G. Spanakis, Wolfgang Steudel, Matthias Stopfkuchen-Evans, Michael P. Storey, Gary R. Strichartz, Balachundhar Subramaniam, Wariya Sukhupragarn, John Summers, Shine Sun, Eswar Sundar, Sugantha Sundar, Neelakantan Sunder, Faraz Syed, Usha B. Tedrow, Nelson L. Thaemert, George P. Topulos, Lawrence C. Tsen, Richard D. Urman, Charles A. Vacanti, Francis X. Vacanti, Joshua C. Vacanti, Assia Valovska, Ivan T. Valovski, Mary Ann Vann, Susan Vassallo, Anasuya Vasudevan, Kamen V. Vlassakov, Gian Paolo Volpato, Essi M. Vulli, J. Matthias Walz, Jingping Wang, James F. Watkins, Maxwell Weinmann, Sharon L. Wetherall, Mallory Williams, Sarah H. Wiser, Zhiling Xiong, Warren M. Zapol, Jie Zhou
- Edited by Charles Vacanti, Scott Segal, Pankaj Sikka, Richard Urman
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- Book:
- Essential Clinical Anesthesia
- Published online:
- 05 January 2012
- Print publication:
- 11 July 2011, pp xv-xxviii
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Contributors
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- By Robert S. Agnew, Lara M. Belliston, Daniel M. Blonigen, Michel Boivin, Jeanne Brooks‐Gunn, Andrew Canastar, Noel A. Card, Emil F. Coccaro, Nicki R. Crick, Linda L. Dahlberg, Garth Davies, Scott H. Decker, Kenneth A. Dodge, Dorothy L. Espelage, Jeffrey Fagan, Albert D. Farrell, David P. Farrington, Daniel J. Flannery, Mark S. Fleisher, Vangie A. Foshee, Holly Foster, Richard J. Gelles, Denise C. Gottfredson, Gary D. Gottfredson, Michael R. Gottfredson, Richard E. Heyman, James C. (Buddy) Howell, Megan Q. Howell, Li Huang, L. Rowell Huesmann, Cynthia Irvin, Gary F. Jensen, Yoshito Kawabata, Lucyna Kirwil, Jeff M. Kretschmar, Robert F. Krueger, Markus J. P. Kruesi, Benjamin B. Lahey, Royce Lee, Scott O. Lilienfeld, Todd D. Little, Anne Martin, Rebecca A. Matthew, Stephen C. Maxson, Jacquelyn Mize, Terrie E. Moffitt, Daniel S. Nagin, Jamie M. Ostrov, Christopher J. Patrick, Bowen Paulle, Gregory S. Pettit, Adrian Raine, Soo Hyun Rhee, Angela Scarpa, Jean R. Séguin, Michelle R. Sherrill, Mark I. Singer, Amy M. Smith Slep, Kevin J. Strom, Patrick Sylvers, Patrick H. Tolan, Elizabeth Trejos‐Castillo, Richard E. Tremblay, Manfred van Dulmen, Johan van Wilsem, Alexander T. Vazsonyi, Edelyn Verona, Frank Vitaro, Monique Vulin‐Reynolds, Irwin D. Waldman, Mark Warr, Stanley Wasserman, Deanna L. Wilkinson
- Edited by Daniel J. Flannery, Kent State University, Ohio, Alexander T. Vazsonyi, Auburn University, Alabama, Irwin D. Waldman, Emory University, Atlanta
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- Book:
- The Cambridge Handbook of Violent Behavior and Aggression
- Published online:
- 05 June 2012
- Print publication:
- 03 September 2007, pp xi-xviii
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Microwave Activation of Dopants & Solid Phase Epitaxy in Silicon
- Douglas C. Thompson, J. Decker, T. L. Alford, J. W. Mayer, N. David Theodore
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- Journal:
- MRS Online Proceedings Library Archive / Volume 989 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 0989-A06-18
- Print publication:
- 2007
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Microwave heating is used to activate solid phase epitaxial re-growth of amorphous silicon layers on single crystal silicon substrates. Layers of single crystal silicon were made amorphous through ion implantation with varying doses of boron or arsenic. Microwave processing occurred inside a 2.45 GHz, 1300 W cavity applicator microwave system for time-durations of 1-120 minutes. Sample temperatures were monitored using optical pyrometery. Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy were used to monitor crystalline quality in as-implanted and annealed samples. Sheet resistance readings show dopant activation occurring in both boron and arsenic implanted samples. In samples with large doses of arsenic, the defects resulting from vacancies and/or micro cluster precipitates are seen in transmission electron micrographs. Materials properties are used to explain microwave heating of silicon and demonstrate that the damage created in the implantation process serves to enhance microwave absorption.