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A Formation of SiO2/4H-SiC Interface by Oxidizing Deposited Poly-Si and High Temperature Hydrogen Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 105
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- 1999
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Volume-preserving geodesic symmetries on four-dimensional Hermitian Einstein spaces
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- Journal:
- Nagoya Mathematical Journal / Volume 146 / June 1997
- Published online by Cambridge University Press:
- 22 January 2016, pp. 13-29
- Print publication:
- June 1997
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Si Surface Preparation with Si Beam Irradiation on the Growth of III-V on Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 485 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 61
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- 1997
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Initial Buffer Layers on the Growth of InGaP on Si by MBE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 441 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 33
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- 1996
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Molecular Beam Epitaxy of InGaP Films Grown on Si(001) Substrates with Various Kinds of Initial Buffer Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 399 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 147
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- 1995
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