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5 - Filtering stages for white space cognitive/software-defined radio receivers

from Part II - Adaptable receivers for white space technologies

Published online by Cambridge University Press:  05 October 2014

Roberto Gomez-Garcia
Affiliation:
University of Alcalá
José Pedro Magalhães
Affiliation:
Universidade de Aveiro, Portugal
José-maría Munoz-Ferreras
Affiliation:
University of Alcalá
Manuel Sánchez-Renedo
Affiliation:
University of Alcalá
Nuno Borges Carvalho
Affiliation:
Universidade de Aveiro, Portugal
Alessandro Cidronali
Affiliation:
Università degli Studi di Firenze, Italy
Roberto Gómez-García
Affiliation:
Universidad de Alcalá, Madrid
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Summary

Introduction

High-frequency filters are essential components in the radio frequency (RF) front-ends for telecommunications and remote-sensing systems. They enable to properly suppress out-of-band additive noise, external – i.e., out-of-system – and internal – i.e., inter-channel – interferences, and nonlinear distortion perturbations in the transmitter and receiver modules of the overall transceiver. Thus, a proper emitted RF signal which does not contaminate other co-channel services can be assured in the transmitter part, whereas a certain quality for the detected signal or “sensitivity” is guaranteed at the receiver end.

When designing passive filters, the obtaining of filtering transfer functions featuring high selectivity and low-power insertion loss in compact-size circuits is a major concern [1]. In the case of active filters, some other relevant factors, such as linearity, noise performance, and power transmission gain must also be considered [2]. Regarding the technologies commonly employed for their practical realization, the choice is mainly driven by the application intended for the filtering device that is to be developed. For example, bulky waveguide and air-/dielectric-cavity resonators are preferred in bandpass filters and multiplexers for satellite communications, where small power insertion loss and high power-handling capability are mandatory issues [3], [4]. Integrated implementations in gallium-arsenide (GaAs) and silicon-germanium (SiGe) processes have been in great demand for portable mobile terminals [5], [6].

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Publisher: Cambridge University Press
Print publication year: 2014

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