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An Observation and Hypothesis for Gate Leakage Mechanism in FinFET Transistor Semiconductor Device from Dies near Wafer Extreme Edge

Published online by Cambridge University Press:  30 July 2021

Wayne Zhao
Wayne Zhao*
Affiliation:
GLOBALFOUNDRIES, Malta, New York, United States

Abstract

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Type
Advanced Imaging and Spectroscopy for Nanoscale Materials Characterization
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 2306 - 2307
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Siddiqui, S., Galatage, R., Zhao, W., et al. , Microelectronic Engineering, Volume 223, (2020), p. 111219.CrossRefGoogle Scholar
Gribelyuk, M. A., Fu, B., Zhao, W., Journal of Applied Physics, 125, (2019); pp.165306CrossRefGoogle Scholar
Zhao, W. and Wang, Y. Y., Microscopy & Microanalysis, Vol. 21 (Supplement 1), (2017), pp.1490–1491.Google Scholar
Xiang, J., ECS Journal of Solid State Science and Technology, 4 (12) (2015), p.441CrossRefGoogle Scholar
Thanks to Globalfoundries Fab8 PFA TEM-prep teams, Irene Brooks and Frieder Baumann for proof-reading, and Management and Legal teams for supporting the publication clearance.Google Scholar