Skip to main content Accessibility help
×
Home

Characterization of Ultrathin Doping Layers in Semiconductors

  • C.P. Liu (a1), R.E. Dunin-Borkowski (a1), C.B. Boothroyd (a1), P.D. Brown (a1) and C.J. Humphreys (a1)...

Abstract

Abstract: The compositional profile of a narrow layer of InAsxPl−x in InP has been determined using energy-filtered Fresnel contrast analysis, high-resolution electron microscopy (HREM), and high-angle annular dark-field (HAADF) imaging. The consistency of the results obtained using the three techniques is discussed, and conclusions are drawn both about the validity of interpreting the magnitude of Fresnel contrast data quantitatively and about the degree to which high-angle annular dark-field images of such materials are affected by inelastic scattering and strain.

Copyright

Related content

Powered by UNSILO

Characterization of Ultrathin Doping Layers in Semiconductors

  • C.P. Liu (a1), R.E. Dunin-Borkowski (a1), C.B. Boothroyd (a1), P.D. Brown (a1) and C.J. Humphreys (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.