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Comparison of Sputtered Titanium Nitride on Silicon Dioxide and Aluminum-Alloy Thin Films

Published online by Cambridge University Press:  02 July 2020

J.L. Drown ,
S.M. Merchant ,
M.E. Gross ,
D. Eaglesham ,
L.A. Giannuzzi  and
R.B. Irwin
J.L. Drown
Affiliation:
Dept. of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL32816
S.M. Merchant
Affiliation:
Lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
M.E. Gross
Affiliation:
Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ07974
D. Eaglesham
Affiliation:
Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ07974
L.A. Giannuzzi
Affiliation:
Dept. of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL32816
R.B. Irwin
Affiliation:
Cirent Semiconductor, 9333 S. John Young Parkway, Orlando, FL32819
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Extract

Titanium nitride (TiN) films are used as anti-reflection coatings (ARC) on aluminum (Al) films to facilitate lithography processes during multilevel metallization for the manufacture of integrated circuits on silicon-based (Si) semiconductor devices. It is generally accepted in the literature that the microstructure of multilevel metal stacks is influenced by the texture of the substrate. For the case of interconnect materials used in the semiconductor industry, a typical metal stack is as follows: Titanium/Titanium Nitride/Al-alloy/ARC-Titanium Nitride. The Ti/TiN layer underneath the Al-alloy film is used as a barrier stack to prevent junction spiking. The Ti/TiN underlayer also determines the growth conditions (crystallography and orientation relationships) of the subsequent Al-alloy film.

This study focuses on the microstructural characterization of the ARC-TiN layer on Si-oxide and Ti/TiN/Al-alloy substrates that are fabricated under similar conditions using conventional physical vapor deposition (PVD - sputtering) techniques. The ARC-TiN microstructure was investigated by transmission electron microscopy (TEM) using a Philips EM430 operating at 300 kV.

Type
Recent Developments in Microscopy for Studying Electronic and Magnetic Materials
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 469 - 470
Copyright
Copyright © Microscopy Society of America 1997

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References

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4. This research was encouraged by Jeff, Bindell and funded by Cirent Semiconductor.Google Scholar