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Direct Phasing Determination of Si(111)-(3X1)-Ag Surface Reconstruction

Published online by Cambridge University Press:  02 July 2020

D. Grozea
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208
C. Collazo-Davila
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208
L. D. Marks
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208
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The Si(111)-(3x1) reconstruction, observed for submonolayer coverage of all alkali metals and Ag, has been an attractive subject to study. Their almost identical low-energy electron diffraction (LEED) I-V curves suggest a similar surface structure, adsorbate size-independent. Moreover, filled-state scanning tunneling microscopy for Li, Na, Ag show similar features, double rows of maxima, resembling zigzag chains, and a pi surface unit cell symmetry. The atomic structure of this reconstruction is still controversial. Several models, most of them based on a π-bonded silicon chain, such as the Seiwatz or extended Pandey chain, have been proposed. This study attempts to determine this structure using direct phasing of transmission electron diffraction (TED) patterns.

Transmission electron microscopy silicon samples were cleaned and the Si(111)-(3x1)-Ag structure obtained in a surface science system, SPEAR, under ultrahigh vacuum conditions. Using the attached Hitachi UHV H-9000 microscope, through exposure series diffraction patterns were recorded and reduced with a cross-correlation technique.

Type
Electron Crystallography; the Electron Phase Problem
Copyright
Copyright © Microscopy Society of America 1997

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References

1.Fan, W. C. and Ignatiev, A., Phys. Rev. B 41 (1990) 3592.10.1103/PhysRevB.41.3592CrossRefGoogle Scholar
2.Wan, K. J., Lin, X. F., and Nogami, J., Phys. Rev. B 46 (1996) 13635.10.1103/PhysRevB.46.13635CrossRefGoogle Scholar
3.Erwin, S. C., Phys. Rev. Lett. 75 (1995) 1973.10.1103/PhysRevLett.75.1973CrossRefGoogle Scholar
4.Weittering, H. H., DiNardo, N. J., Perez-Sandoz, R., Chen, J., and Mele, E. J., Phys. Rev. B 49 (1994) 16837.10.1103/PhysRevB.49.16837CrossRefGoogle Scholar
5.Collazo-Davila, C., Landree, E., Grozea, D., Jayaram, G., Plass, R., Stair, P.C., and Marks, L. D., JMSA 1 (1995) 267.Google Scholar
6.Xu, P., Jayaram, G., and Marks, L. D., Ultramicroscopy 53 (1994) 15.10.1016/0304-3991(94)90100-7CrossRefGoogle Scholar
7.Marks, L. D. and Landree, E., submitted to Acta Cryst..Google Scholar
8.Marks, L. D. and Plass, P., Phys. Rev. Lett. 75 (1995) 2172.10.1103/PhysRevLett.75.2172CrossRefGoogle Scholar
9. The authors would like to acknowledge the support of the National Science Foundation on grant #DMR-9214505 in funding this work.Google Scholar