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Image Simulation and Analysis to Predict the Sensitivity Performance of a Multi-Electron Beam Wafer Defect Inspection Tool

Published online by Cambridge University Press:  25 July 2016

Maseeh Mukhtar ,
Kathy Quoi ,
Benjamin D Bunday ,
Matt Malloy  and
Brad Thiel
Maseeh Mukhtar
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY12203
Kathy Quoi
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY12203
Benjamin D Bunday
Affiliation:
SUNY Polytechnic SEMATECH, Albany, NY, 12203
Matt Malloy
Affiliation:
SUNY Polytechnic SEMATECH, Albany, NY, 12203
Brad Thiel
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY12203 SUNY Polytechnic SEMATECH, Albany, NY, 12203

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 620 - 621
Copyright
© Microscopy Society of America 2016 

References

[1] Thiel, B., et al., “Assessing the Viability of Multi-Electron Beam Wafer Inspection for sub-20 nm Defects”, Proc. SPIE 9236, Scanning Microscopies 2014, 92360E (2014).Google Scholar
[2] Malloy, M., et al., “Massively Parallel E-Beam Inspection: Enabling next-generation patterned defect inspection for wafer and mask manufacturing”. Metrology, Inspection, and Process Control for Microlithography XXIX. Proc. SPIE 9423, 9423-44 (2015) in press..Google Scholar
[3] Kemen, T., et al., “Further advancing the throughput of a multi-beam SEM.” Metrology, Inspection, and Process Control for Microlithography XXIX. Proc. SPIE 9424, 9423-64 (2015) in press..Google Scholar
[4] Bunday, B., et al., “Simulating Massively Parallel Electron Beam Inspection for sub-20 nm Defects”, Metrology, Inspection, and Process Control for Microlithography XXIX, Proc. SPIE 9423, 9424-19 (2015) in press..Google Scholar
[5] This work was supported by SEMATECH.Google Scholar