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Effects of Ion Species and Energy on the Amorphization of Si During FIB TEM Sample Preparation as Determined by Computational and Experimental Methods

Published online by Cambridge University Press:  02 July 2020

R. B. Jamison ,
A. J. Mardinly ,
D. W. Susnitzky  and
R. Gronsky
R. B. Jamison
Affiliation:
Materials Technology Dept., Intel Corporation, 2200 Mission College Blvd., SC2-24, Santa Clara, CA, 95052-8119 Materials Science and Mineral Engineering, University of California, Berkeley, Berkeley, CA, 94720-1760
A. J. Mardinly
Affiliation:
Materials Technology Dept., Intel Corporation, 2200 Mission College Blvd., SC2-24, Santa Clara, CA, 95052-8119
D. W. Susnitzky
Affiliation:
Materials Technology Dept., Intel Corporation, 2200 Mission College Blvd., SC2-24, Santa Clara, CA, 95052-8119
R. Gronsky
Affiliation:
Materials Science and Mineral Engineering, University of California, Berkeley, Berkeley, CA, 94720-1760
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Extract

Gallium focused ion beam (FIB) milling is the method of choice to prepare cross sections of selected features from microelectronic devices for transmission electron microscope (TEM) imaging and analysis. The FIB milling technique is unsurpassed in producing an ultra-thin cross section accurately located through the feature of interest. While much effort has been invested in the development and refinement of Ga+ FIB techniques and instrumentation, there are problems due to the physics of the ion-solid interaction. The problem of surface amorphization limits the quality of the TEM samples and its significance increases as the feature size and the specimen thickness decrease.

In Ga+ FIB milling of silicon, the amorphous damage layer consists of amorphous Si doped with implanted Ga. This damage layer is caused by ions that strike the surface of the silicon and are subsequently scattered laterally as a result of collisions with the Si atoms.

Type
Applications and Developments of Focused Ion Beams
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 526 - 527
Copyright
Copyright © Microscopy Society of America

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References

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6. This research was supported by Intel Corp. through the Materials Technology Dept.Google Scholar

7. The authors would like to acknowledge E. Van Cappellen of FEI Co. for providing the use of an In LMIS FIB.Google Scholar