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The Formation of Clusters and Nanocrystals in Er-Implanted Hexagonal Silicon Carbide

Published online by Cambridge University Press:  17 March 2004

U. Kaiser ,
D.A. Muller ,
A. Chuvilin ,
G. Pasold  and
W. Witthuhn
U. Kaiser
Affiliation:
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
D.A. Muller
Affiliation:
Bell Laboratories, Lucent Technology, 700 Mountain Avenue, Murray Hill, NJ 07974, USA
A. Chuvilin
Affiliation:
Boreskov Institute of Catalysis, SB RAS, av. Lavrentieva 5, Novosibirsk 90, Russia 630090
G. Pasold
Affiliation:
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
W. Witthuhn
Affiliation:
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
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Abstract

Impurity atom cluster and nanocrystal formation in Er-implanted hexagonal SiC were studied using TEM and HAADF-STEM. Short interstitial loops were initially observed to form in the as-implanted layers. After annealing at 1600°C extended matrix defects (wide interstitial loops and voids), Er atom clusters and nanocrystals grew. The wide interstitial loops act as strong sinks capturing diffusing dopants that gather first in lines, then planes, and finally in three-dimensional ErSi2 nanocrystals. The unstrained nanocrystals have a hill-like shape and only two polarity-dependent orientations with respect to the matrix. One-, two-, and three-dimensional Er atom clusters were also identified. For the case of Ge implantation, again the wide interstitial loops act as sinks for the implanted Ge, representing the seeds of the nanocrystal.

Keywords

silicon carbideEr implantationErSi2 nanocrystalshigh-resolution TEMatomic resolution HAADF-STEMEELS
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 10 , Issue 2 , April 2004 , pp. 301 - 310
Copyright
© 2004 Microscopy Society of America

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References

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