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Investigating the Effect of As and Te Passivation on the MBE Growth of Cdte (111) On Si (111) Substrates

Published online by Cambridge University Press:  02 July 2020

Y. Xin ,
S. Rujirawat ,
G. Brill ,
N.D. Browning ,
S.J. Pennycook ,
S. Sivananthan  and
R. Sporken
Y. Xin
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
S. Rujirawat
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
G. Brill
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
N.D. Browning
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
S.J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN37831-6031, USA
S. Sivananthan
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
R. Sporken
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
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Extract

The epitaxial growth of CdTe on Si is currently being investigated as a means of generating an alternative substrate for the subsequent growth and processing of HgCdTe based infrared detecting devices. The most favorable orientation for the growth of high-quality HgCdTe is CdTe (111)B, which has been demonstrated to be grown on miscut Si (001) substrates with very high quality . However, twinning islands and multiple domains are present at the nucleation stage, which has a detrimental effect on the device properties.

An alternative approach, which has the potential to overcome the multiple domain problems in the nucleation stage, is to grow CdTe (111) B on Si (111) substrates. However, previous reports have shown that the direct growth of CdTe onto Si (111) results in an A-polarity for the films . In an attempt to overcome this limitation, passivation of the substrate surface has been investigated.

Type
Defects in Semiconductors
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 724 - 725
Copyright
Copyright © Microscopy Society of America

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References

1.Xin, Y., Browning, N.D., Nellist, P.D., Rujirawat, S., Chen, Y.P., Sivananthan, S., Pennycook, S.J., J. Appl. Phys. 84 (1998) 4292.CrossRefGoogle Scholar
2.Ebe, H., and Nishijima, Y., Appl. Phys. Lett. 67, (1995) 3138.CrossRefGoogle Scholar
3.Bringans, R.D., Critical Reviews in Solid State and Materials Sciences, 17, (1992) 353CrossRefGoogle Scholar
4. Sponsored by NSF DMR 9733895, DMR-9601792 and DOE DE-AC05-96OR22464.Google Scholar