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    Ma, Chunrui Ma, Beihai Mi, Shao-Bo Liu, Ming and Wu, Judy 2014. Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films. Applied Physics Letters, Vol. 104, Issue. 16, p. 162902.


    Nili, Hussein Kalantar-zadeh, Kourosh Bhaskaran, Madhu and Sriram, Sharath 2013. In situ nanoindentation: Probing nanoscale multifunctionality. Progress in Materials Science, Vol. 58, Issue. 1, p. 1.


    Sriram, Sharath Bhaskaran, Madhu and Mitchell, Arnan 2010. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. p. 29.

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Microstructural and Compositional Analysis of Strontium-Doped Lead Zirconate Titanate Thin Films on Gold-Coated Silicon Substrates

  • S. Sriram (a1), M. Bhaskaran (a1), D.R.G. Mitchell (a2), K.T. Short (a2), A.S. Holland (a1) and A. Mitchell (a1)
  • DOI: http://dx.doi.org/10.1017/S1431927609090072
  • Published online: 01 January 2009
Abstract
Abstract

This article discusses the results of transmission electron microscopy (TEM)-based characterization of strontium-doped lead zirconate titanate (PSZT) thin films. The thin films were deposited by radio frequency magnetron sputtering at 300°C on gold-coated silicon substrates, which used a 15 nm titanium adhesion layer between the 150 nm thick gold film and (100) silicon. The TEM analysis was carried out using a combination of high-resolution imaging, energy filtered imaging, energy dispersive X-ray (EDX) analysis, and hollow cone illumination. At the interface between the PSZT films and gold, an amorphous silicon-rich layer (about 4 nm thick) was observed, with the film composition remaining uniform otherwise. The films were found to be polycrystalline with a columnar structure perpendicular to the substrate. Interdiffusion between the bottom metal layers and silicon was observed and was confirmed using secondary ion mass spectrometry. This occurs due to the temperature of deposition (300°C) being close to the eutectic point of gold and silicon (363°C). The diffused regions in silicon were composed primarily of gold (analyzed by EDX) and were bounded by (111) silicon planes, highlighted by the triangular diffused regions observed in the two-dimensional TEM image.

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Corresponding author. E-mail: sharath.sriram@gmail.com
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C. Bedoya , Ch. Muller , J.-L. Baudour , V. Madigou , M. Anne & M. Roubin (2000). Sr-doped PbZr1−xTixO3 ceramic: Structural study and field-induced reorientation of ferroelectric domains. Mater Sci Eng B 75, 4352.

M. Bhaskaran , S. Sriram & A.S. Holland (2006). RF magnetron sputtered perovskite-oriented PSZT thin films on gold for piezoelectric and ferroelectric transducers. Electron Lett 42, 244245.

S. Kanamori & H. Sudo (1982). Effects of titanium layer as diffusion barrier in Ti/Pt/Au beam lead metallization on polysilicon. IEEE Trans Comp Hybrids Manuf Tech CHMT-5, 318321.

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S. Sriram , M. Bhaskaran & A.S. Holland (2006a). The effect of post-deposition cooling rate on the orientation of piezoelectric (Pb0.92Sr0.08)(Zr0.65Ti0.35)O3 thin films deposited by RF magnetron sputtering. Semiconductor Sci Tech 21, 12361243.

S. Sriram , M. Bhaskaran , A.S. Holland , K.T. Short & B.A. Latella (2007). Measurement of high piezoelectric response of strontium-doped lead zirconate titanate thin films using a nanoindenter. J Appl Phys 101, 104910.

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H. Zheng , I.M. Reaney , W.E. Lee , N. Jones & H. Thomas (2002). Surface decomposition of strontium-doped soft PbZrO3–PbTiO3. J Am Ceram Soc 85, 207212.

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Microscopy and Microanalysis
  • ISSN: 1431-9276
  • EISSN: 1435-8115
  • URL: /core/journals/microscopy-and-microanalysis
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