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Practical Aspects of FIB Milling: Understanding Ion Beam/Material Interactions

Published online by Cambridge University Press:  02 July 2020

B. I. Prenitzer ,
B. W. Kempshall ,
S. M. Schwarz ,
L. A. Giannuzzi  and
F. A. Stevie
B. I. Prenitzer
Affiliation:
Advanced Materials Processing and Analysis Center, AMP AC 12424 Research Parkway, Suite 408, Orlando, FL, 32826
B. W. Kempshall
Affiliation:
Mechanical Materials Aerospace Engineering, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL, 32816-2450
S. M. Schwarz
Affiliation:
Mechanical Materials Aerospace Engineering, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL, 32816-2450
L. A. Giannuzzi
Affiliation:
Advanced Materials Processing and Analysis Center, AMP AC 12424 Research Parkway, Suite 408, Orlando, FL, 32826 Mechanical Materials Aerospace Engineering, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL, 32816-2450
F. A. Stevie
Affiliation:
Cirent Semiconductor (Lucent Technologies)9333 S. John Young Parkway, Orlando, FL, 32819
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Nanometer scale, high resolution Ga+ ion probes, attainable in commercially available focused ion beam (FIB) instruments, allow imaging, sputtering and deposition operations to be performed with a high degree of spatial precision. Of particular interest is how this precision milling/deposition capability has enabled a wide range of site specific micromachining and microfabrication operations (e.g., TEM, SEM, SIMS, and AUGER specimen preparation and circuit modification). The applications of FIB instruments frequently involve the creation of high aspect ratio features (i.e., deep narrow trenches). Ideally, the sidewalls of an FIB milled feature should be vertical; however, it has been generally observed that the trenches tend to exhibit a gradual sloping. The observed deviation from vertical milling has been attributed to the redeposition of sputtered material, and is especially pervasive at high beam currents and confining trench geometries. A hole milled with an FIB tends to be widest at the top surface and taper down to a point at the bottom.

Type
Applications and Developments of Focused Ion Beams
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 502 - 503
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Stevie, F. A. et al., Proceedings: Microscopy and Microanalysis ‘99, vol.5, supplement 2 (1999)Google Scholar
2.Giannuzzi, L. A., Mater. Res. Soc. Symp. Proc. Vol. 480 (1997)19CrossRefGoogle Scholar
3.Masayoshi, T. et al., Technology Reports of the Osaka University vol. 43, no. 2143, (1993)167Google Scholar
4.Ishitani, T. et al., J. Electron microsc. vol. 43, (1994)322.Google Scholar
5.Prenitzer, B.I. et al., Met. and Mat. Trans. A. vol. 29A, no. 9, Sep (1998) 2399CrossRefGoogle Scholar
6.Yamaguehi, H. et al., J. Vac. Sci. Technol. B3(1) (1985)71CrossRefGoogle Scholar
7.Ochiai, Y.. J. Vac. Sci. Technol. B5(1)(1987)423CrossRefGoogle Scholar
8.Prenitzer, B.I.. Doctoral Dissertation. University of Central Florida, (1999)Google Scholar
9.Prenitzer, B.l., Proceedings: Microscopy and Microanalysis ‘9H, vol.4, supplement 2 (1998)858Google Scholar
10.Thayer, M.L.. ISTFA'93, Nov. (1993)425Google Scholar
11.Walker, J.F., Focused Ion Beam Applications Using Enhanced EtchGoogle Scholar
12.Young, R.J., J. Vac. Sci. Technol. Bl 1(2)(1993)234CrossRefGoogle Scholar
13. FEI Application Note: High Aspect Ratio Hole Drilling Using FIB Enhanced Etch Process (1993)Google Scholar
14. The authors would like to gratefully acknowledge the support of AMPAC, the I4/UCF/Cirent Partnership, NSF DMR #9703281, the FEI corporation, and Micro Optics Inc.Google Scholar