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Quantitative Investigations of Interfaces and Grain Boundaries by Phase Contrast Electron Microscopy with Ultra High Resolution

Published online by Cambridge University Press:  02 July 2020

C. Kisielowski
Affiliation:
National Center for Electron Microscopy, Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, CA, 94720
J.M. Plitzko
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA, 94551
S. Lartigue
Affiliation:
CECM Vitry, CRNS, France
T. Radetic
Affiliation:
National Center for Electron Microscopy, Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, CA, 94720
U. Dahmen
Affiliation:
National Center for Electron Microscopy, Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, CA, 94720
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Abstract

Recent progress in High Resolution Transmission Electron Microscopy makes it possible to investigate crystalline materials by phase contrast microscopy with a resolution close to the 80 pm information limit of a 300 kV field emission microscope'"". A reconstruction of the electron exit wave from a focal series of lattice images converts the recorded information into interpretable resolution. The present contribution illustrates some recent applications of this technique to interfaces.

Fig. 1 shows a reconstructed electron exit wave of a heterophase interface between GaN and sapphire. The experiment takes advantage of three factors: First, we resolved the GaN lattice in projection, which requires at least 0.15 nm resolution. The projection eliminates the stacking fault contrast that usually obscures lattice images in the commonly recorded projection. Thus, image interpretation is drastically simplified. Second, all atom columns at the interface and in the sapphire are resolvable with a smallest projected aluminum - oxygen spacing of 85 pm in the sapphire.

Type
Quantitative Transmission Electron Microscopy of Interfaces (Organized by M. Rüehle, Y. Zhu and U. Dahmen)
Copyright
Copyright © Microscopy Society of America 2001

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References

References:

1.Kisielowski, C., Nelson, E.C., Song, C., Kilaas, R., Thust, A., Microscopy and Microanalysis 6, 2000, 16CrossRefGoogle Scholar
2.O’Keefe, M.A., Microscopy and Microanalysis 6, 2000, 1192CrossRefGoogle Scholar
3.Kisielowski, C., Hetherington, C.J.D., Wang, Y.C., Kilaas, R., O’Keefe, M.A., Thust, A., Sub. to Ultramicroscopy, 2000Google Scholar
4.O’Keefe, M.A., Hetherington, C.J.D., Wang, Y.C., Nelson, E.C., Turner, J.H., Kisielowski, C., Malm, J.-O., Mueller, R., Ringnalda, J., Pam, M., Thust, A., Sub. to Ultramicroscopy, 2000Google Scholar
5.Coene, W.M.J., Thust, A., Op de Beeck, M., Van Dyck, D., Ultramicroscopy 64, 1996, 109CrossRefGoogle Scholar
6.Thust, A., Coene, W.M.J., Op de Beeck, M., Van Dyck, D., Ultramicroscopy 64, 1996, 211CrossRefGoogle Scholar
7.Plitzko, J.M., Campbell, G.H., King, W.E., Foiles, S.M. in Bentley, J., Dahmen, U., Allen, C., Petrov, I., (eds) Materials Research Society Symp. 589, 2000, in pressGoogle Scholar
8.Kisielowski, C., Schmidt, O., Yang, J., Mat. Res. Soc. Symp., 482, 1998, 369CrossRefGoogle Scholar
9.Jia, C.L., Thust, A., Phys. Rev. Lett. 82, 1999, 5052CrossRefGoogle Scholar
10.van Dyck, D., Chen, J.H., Solid State Communications 109, 1999, 501CrossRefGoogle Scholar
11.The project is sponsored by the Director, Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098.Google Scholar