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Simulation and Optimization of a Carbon Nanotube Electron Source

Published online by Cambridge University Press:  28 September 2015

Alexandr Knápek ,
Tomáš Radlička  and
Stanislav Krátký
Alexandr Knápek
Affiliation:
Institute of Scientific Instruments of the ASCR, v.v.i., Královopolská 147, 612 64 Brno, Czech Republic.
Tomáš Radlička
Affiliation:
Institute of Scientific Instruments of the ASCR, v.v.i., Královopolská 147, 612 64 Brno, Czech Republic.
Stanislav Krátký
Affiliation:
Institute of Scientific Instruments of the ASCR, v.v.i., Královopolská 147, 612 64 Brno, Czech Republic.

Abstract

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This paper deals with an optimization of a field-emission structure concept based on vertically aligned carbon nanotubes (CNT). A design concept for a fabrication method for a gate structure based on electron beam lithography is reviewed in the first part of the paper. A single carbon nanotube is grown by the PECVD method inside the gate structure. Calculations and simulations that help determine gate structure proportions in order to obtain the best possible electron reduced brightness and to predict the cathode's electric behavior are also essential parts of this study.

Type
Electron Optics
Information
Microscopy and Microanalysis , Volume 21 , Supplement S4: Proceedings Ninth International Conference on Charged Particle Optics , June 2015 , pp. 60 - 65
Copyright
Copyright © Microscopy Society of America 2015 

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