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Spatially-resolved EELS and EDS Analysis of HfOxNy Gate Dielectrics Deposited by MOCVD using [(C2H5)2N]4Hf with NO and O2

Published online by Cambridge University Press:  01 August 2004

X Wu ,
M. Couillard ,
M.-S. Lee ,
J.-H. Chen ,
G.A. Botton ,
D. Landheer ,
Z.-H. Lu ,
W.-T. Ng  and
T.-S. Chao
X Wu
Affiliation:
National Research Council of Canada, Ottawa, Canada
M. Couillard
Affiliation:
McMaster University, Hamilton, Canada
M.-S. Lee
Affiliation:
University of Toronto, Toronto, Canada
J.-H. Chen
Affiliation:
National Chiao-Tung University, Hsinchu, Taiwan
G.A. Botton
Affiliation:
McMaster University, Hamilton, Canada
D. Landheer
Affiliation:
National Research Council of Canada, Ottawa, Canada
Z.-H. Lu
Affiliation:
University of Toronto, Toronto, Canada
W.-T. Ng
Affiliation:
University of Toronto, Toronto, Canada
T.-S. Chao
Affiliation:
National Chiao-Tung University, Hsinchu, Taiwan
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Extract

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Type
Research Article
Information
Microscopy and Microanalysis , Volume 10 , Issue S02 , August 2004 , pp. 606 - 607
Copyright
© 2004 Microscopy Society of America

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