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Strain Measurements at a NiSi/Si Interface Using STEM-CBED: A Quantifaction Method for Stress Relaxation During TEM Lamella Preparation

Published online by Cambridge University Press:  24 July 2003

R. Pantel
Affiliation:
STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France
L. Clément
Affiliation:
CEA-Grenoble, DRFMC/SP2M, 17 rue des Martyrs, F-38054 Grenoble, France Philips Semiconductor Crolles, 850 Rue Jean Monnet, F-38926 Crolles, France
J. L. Rouvière
Affiliation:
CEA-Grenoble, DRFMC/SP2M, 17 rue des Martyrs, F-38054 Grenoble, France
L.F.Tz. Kwakman
Affiliation:
Philips Semiconductor Crolles, 850 Rue Jean Monnet, F-38926 Crolles, France

Abstract

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Abstract
Copyright
Copyright © Microscopy Society of America 2003