Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-31T16:03:13.788Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure Characterization of Colossal Magnetoresistive Oxides

Published online by Cambridge University Press:  02 July 2020

Y. Berta ,
D.B. Studebaker ,
M. Todd ,
T.H. Baum  and
Z.L. Wang
Y. Berta
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332
D.B. Studebaker
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT, 06810
M. Todd
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT, 06810
T.H. Baum
Affiliation:
Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT, 06810
Z.L. Wang
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332
Get access

Extract

Magnetoresistance describes a phenomenon in which the electrical resistance of the material depends strongly on an externally applied magnetic field. Colossal magnetoresistance (CMR) was observed in a new class of oxides, (La,A)MnO3 (A = Ca, Sr, or Ba), and the Magnetoresistance ratio of ΔR/R(H)> -100,000% has been reported in epitaxially grown La0.67Ca0.33MnO3 films. The new types of intrinsic magnetoresistive oxides offer exciting possibilities for improved magnetic sensors, magnetoresistive read heads, and magnetoresistive random access memory (MRAM).

The CMR magnetic oxides have a perovskite-type crystal structure with ferromagnetic ordering in the a-b planes and antiferromagnetic ordering along the c-axis (Figure 1). The ferromagnetically ordered Mn-O layers of the a-b planes are isolated by a non-magnetic La(A)-O monolayer. This spin-coupling structure is intrinsic. La1-xAxMn03 compounds having the extreme values x = 0, 1 are neither ferromagnetic nor good electrical conductors; they are semiconductors. Only compounds with intermediate values of x are ferromagnetic,

Type
Microscopy of Ceramics and Minerals
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 572 - 573
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zener, C., Phys. Rev. 82, 403 (1951).CrossRefGoogle Scholar

2. Kurata, H. and Colliex, C., Phys. Rev. B 48, 2102 (1993).CrossRefGoogle Scholar

3. Pearson, D.H., Ahn, C.C. and Fultz, B., Phys. Rev. B 47, 8471 (1993).CrossRefGoogle Scholar

4. Wang, Z.L., Yin, J.S., Jiang, Y.D. and Zhang, J., Appl. Phys. Lett., 70, 3362 (1997).CrossRefGoogle Scholar

5. Wang, Z.L. and Yin, J.S., Philos. Mag. B 11, 49 (1998).CrossRefGoogle Scholar

6. Wang, Z.L., Yin, J.S., Mo, W.D. and Zhang, Z.J., J. Phys. Chem. B. 101, 6793 (1997).CrossRefGoogle Scholar