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Templating Effects On C54-Tisi2 Formation In Ternary Reactions.

Published online by Cambridge University Press:  02 July 2020

A. Quintero ,
M. Libera ,
C. Cabral Jr ,
C. Lavoie  and
J. M. Harper
A. Quintero
Affiliation:
Stevens Institute of Technology, Hoboken, NJ07030
M. Libera
Affiliation:
Stevens Institute of Technology, Hoboken, NJ07030
C. Cabral Jr
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY10598
C. Lavoie
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY10598
J. M. Harper
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY10598
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Extract

Titanium disilicide (C54-TiSi2) is a low resistivity silicide (15 - 20 μΩ-cm) and is widely used in the device industry. It is formed at about 750-850 °C when thin layers (∽30- lOOnm) of Ti on poly- or single-crystal Si substrates are subjected to rapid thermal annealing (3 °C/sec) in a controlled atmosphere (N2). During the anneal, other Ti silicides such as Ti5Si3, Ti5Si4 ,TiSi and C49-TiSi2 may form prior to the desirable C54-TiSi2.

Some attempts have been made to promote low-temperature C54-TiSi2 formation. Depositing a Mo (l-2nm) interlayer between Ti and Si has been reported to decrease the C54 formation temperature by 100 °C.2 Codepositing Ti with Ta, Nb or Mo has successfully decreased the formation temperature by about 150 °C.3 These findings have been interpreted in terms of a template mechanism which facilitates formation of C54 by advantageous lattice matching between similar planes in C54 and a hexagonal ternary (Ti- X-Si, X=Ta, Nb, Mo) C40 precursor phase.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 666 - 667
Copyright
Copyright © Microscopy Society of America

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References

1 Murarka, S. P., Silicides for VLSI Applications. Academic Press (1983).Google Scholar

2 Mouroux, A., Zhang, S. L., Kaplan, W. K., Nygren, S., Ostling, M. and Petersson, C. S., Appl. Phys. Lett. 69, 975 (1996).CrossRefGoogle Scholar

3 Cabral, C., Jr. Clevenger, L. A., Harper, J. M., d'Heurle, F. M., Roy, R. A.,, Lavoie, C. and Saenger, K. L.Appl. Phys. Lett vol 71 page 3531 (1997)CrossRefGoogle Scholar

4 EMS, Electron Microscopy Simulation program by P. Stadelman, Ecole Technique Federale de Lausanne, Switzerland.Google Scholar

5 Joint Committee on Powder Diffraction Standards, 1601 Park Lane Swarthmore, Pa. 19081Google Scholar