Hostname: page-component-848d4c4894-4hhp2 Total loading time: 0 Render date: 2024-05-21T05:23:17.445Z Has data issue: false hasContentIssue false
  • English
  • Français

Why does the hkl: h+k+l = 4n+2 reflections reveal intensity in Si [110]?

Published online by Cambridge University Press:  01 August 2002

P. Geuens ,
C.B. Carter  and
D. Van Dyck
P. Geuens
Affiliation:
EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
C.B. Carter
Affiliation:
Dept. Ch. E. & Materials Science, University of Minnesota, Minneapolis, USA
D. Van Dyck
Affiliation:
EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 8 , Issue S02 , August 2002 , pp. 662 - 663
Copyright
Copyright © Microscopy Society of America 2002