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Conductance switching behavior of GeTe/Sb2Te3 superlattice upon hot-electron injection: a scanning probe microscopy study

Published online by Cambridge University Press:  19 February 2016

Leonid Bolotov ,
Yuta Saito ,
Tetsuya Tada  and
Junji Tominaga
Leonid Bolotov*
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan. CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan.
Yuta Saito
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan. CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan.
Tetsuya Tada
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan. CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan.
Junji Tominaga
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan. CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan.
*
*(Email: bolotov.leonid@aist.go.jp)
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Abstract

Topological (GeTe)/(Sb2Te3) superlattices (SL) are of practical interest for memory applications because of different mechanism of electric conductance switching in the crystalline phase. In the work, electrical switching behavior of individual SL grains was examined employing a multimode scanning probe microscope (MSPM) in a lithography mode at room temperature. Using programmed bias voltage with different amplitude and pulse duration, we observed the position-dependent variations of the switching voltage and the current injection delay for [(GeTe)2 (Sb2Te3)]4 SLs on Si(100). The results shed a light on the role of electric field and hot-electron injection on the SL conductance switching.

Keywords

scanning probe microscopy (SPM)nanoscaleelectronic material
Type
Articles
Information
MRS Advances , Volume 1 , Issue 5: Electronics and Photonics , 2016 , pp. 375 - 380
Copyright
Copyright © Materials Research Society 2016 

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References

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