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Degradation Process in Pentacene-Based Organic Field-Effect Transistors Evaluated by Three-Terminal Capacitance-Voltage Measurements

Published online by Cambridge University Press:  20 February 2017

Yuya Tanaka ,
Kohei Yamamoto ,
Yutaka Noguchi  and
Hisao Ishii
Yuya Tanaka*
Affiliation:
Center for Frontier Science, Chiba University, Chiba 263-8522, Japan. Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan.
Kohei Yamamoto
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan.
Yutaka Noguchi
Affiliation:
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan.
Hisao Ishii
Affiliation:
Center for Frontier Science, Chiba University, Chiba 263-8522, Japan. Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522, Japan. Molecular Chirality Research Center, Chiba University, Chiba 263-8522, Japan.
*
*(Email: y-tanaka@chiba-u.jp)
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Abstract

By taking advantage of three-terminal capacitance-voltage (TT-CV) measurement, we investigated a formation of trapped charge in pentacene(Pn)-based organic field-effect transistors (OFETs) during the bias stress measurement. The shift of the turn-on voltage in transfer curve correlated well with the increase of trapped charge estimated from TT-CV curves. Moreover, TT-CV measurement revealed that the trapped charges were distributed inhomogeneously at the vicinity of the pentacene/insulator interface, indicating that the current does not obviously affect their formation. Thus we suggested that the trapped charges are formed by keeping Pn molecules as unstable cation (hole state) by the prolonged bias stress.

Keywords

organicdeviceselectronic material
Type
Articles
Information
MRS Advances , Volume 2 , Issue 23: Electronics, Magnetics and Photonics , 2017 , pp. 1267 - 1272
Copyright
Copyright © Materials Research Society 2017 

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