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Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals

Published online by Cambridge University Press:  16 May 2016

Fabio Isa ,
Arik Jung ,
Marco Salvalaglio ,
Yadira Arroyo Rojas Dasilva ,
Mojmír Meduňa ,
Michael Barget ,
Thomas Kreiliger ,
Giovanni Isella ,
Rolf Erni  and
Fabio Pezzoli
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Fabio Isa*
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, Zürich, CH-8093, Switzerland Electron Microscopy Center, Empa, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland
Arik Jung
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, Zürich, CH-8093, Switzerland Electron Microscopy Center, Empa, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland
Marco Salvalaglio
Affiliation:
L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, Milano, I-20125, Italy
Yadira Arroyo Rojas Dasilva
Affiliation:
Electron Microscopy Center, Empa, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland
Mojmír Meduňa
Affiliation:
Department of Condensed Matter Physics, Masaryk University, Kotlářská 2, Brno, 61137, Czech Republic CEITEC, Masaryk University, Kamenice 5, Brno, 60177, Czech Republic
Michael Barget
Affiliation:
L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, Milano, I-20125, Italy
Thomas Kreiliger
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, Zürich, CH-8093, Switzerland
Giovanni Isella
Affiliation:
L-NESS and Department of Physics, Politecnico di Milano, Via Anzani 42, Como, I-22100, Italy
Rolf Erni
Affiliation:
Electron Microscopy Center, Empa, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland
Fabio Pezzoli
Affiliation:
L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, Milano, I-20125, Italy
Emiliano Bonera
Affiliation:
L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, Milano, I-20125, Italy
Philippe Niedermann
Affiliation:
CSEM, Rue Jaquet-Droz 1, Neuchâtel, CH-2002, Switzerland
Kai Zweiacker
Affiliation:
Center for X-Ray Analytics, Empa, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland
Antonia Neels
Affiliation:
Center for X-Ray Analytics, Empa, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland
Alex Dommann
Affiliation:
Center for X-Ray Analytics, Empa, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland
Pierangelo Gröning
Affiliation:
Advanced Materials and Surfaces Department, Empa, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland
Francesco Montalenti
Affiliation:
L-NESS and Department of Materials Science, Università di Milano-Bicocca, Via Cozzi 55, Milano, I-20125, Italy
Hans von Känel
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, Zürich, CH-8093, Switzerland Electron Microscopy Center, Empa, Überlandstrasse 129, Dübendorf, CH-8600, Switzerland
*
*(Email: isaf@phys.ethz.ch)
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Abstract

We present a new concept applicable to the epitaxial growth of dislocation-free semiconductor structures on a mismatched substrate with a thickness far exceeding the conventional critical thickness for plastic strain relaxation. This innovative concept is based on the out-of-equilibrium growth of compositionally graded alloys on deeply patterned substrates. We obtain space-filling arrays of individual crystals several micrometers wide in which the mechanism of strain relaxation is fundamentally changed from plastic to elastic. The complete absence of dislocations at and near the heterointerface may pave the way to realize CMOS integrated SiGe X-ray detectors.

Keywords

crystal growthdislocationselastic properties
Type
Articles
Information
MRS Advances , Volume 1 , Issue 50: Electronics and Photonics , 2016 , pp. 3403 - 3408
Copyright
Copyright © Materials Research Society 2016 

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References

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