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Two-step-index ZnMgTe/ZnTe Waveguide Structures with Improved Crystal Quality

Published online by Cambridge University Press:  15 February 2016

Wei-Che Sun ,
Fukino Kazami ,
Jing Wang ,
Taizo Nakasu ,
Shota Hattori ,
Takeru Kizu ,
Yuki Hashimoto ,
Masakazu Kobayashi  and
Toshiaki Asahi
Wei-Che Sun*
Affiliation:
Waseda University, Department of Electrical Engineering, 3-4-1 Ookubo, Shinjuku-ku, Tokyo,169-8555, Japan,
Fukino Kazami
Affiliation:
Waseda University, Department of Electrical Engineering, 3-4-1 Ookubo, Shinjuku-ku, Tokyo,169-8555, Japan,
Jing Wang
Affiliation:
Waseda University, Department of Electrical Engineering, 3-4-1 Ookubo, Shinjuku-ku, Tokyo,169-8555, Japan,
Taizo Nakasu
Affiliation:
Waseda University, Department of Electrical Engineering, 3-4-1 Ookubo, Shinjuku-ku, Tokyo,169-8555, Japan,
Shota Hattori
Affiliation:
Waseda University, Department of Electrical Engineering, 3-4-1 Ookubo, Shinjuku-ku, Tokyo,169-8555, Japan,
Takeru Kizu
Affiliation:
Waseda University, Department of Electrical Engineering, 3-4-1 Ookubo, Shinjuku-ku, Tokyo,169-8555, Japan,
Yuki Hashimoto
Affiliation:
Waseda University, Department of Electrical Engineering, 3-4-1 Ookubo, Shinjuku-ku, Tokyo,169-8555, Japan,
Masakazu Kobayashi
Affiliation:
Waseda University, Department of Electrical Engineering, 3-4-1 Ookubo, Shinjuku-ku, Tokyo,169-8555, Japan, Waseda University, The Kagami Memorial Laboratory for Materials Science and Technology 2-8-26, Nishiwaseda, Shinjuku-ku, Tokyo, 169-0051, Japan
Toshiaki Asahi
Affiliation:
JX Nippon Mining & Metals Corp. 3453, Miyata-cho, Hitachi-shi, Ibaraki, 317-0055, Japan
*
*(Email: sun@fuji.waseda.jp)
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Abstract

ZnMgTe(Cladding)/ZnTe(Core)/ZnMgTe(Cladding) thin film waveguide had been grown by molecular beam epitaxy (MBE) and presented a great potential to be a high performance Electro-optical (EO) modulator. For a low propagation loss ZnMgTe/ZnTe waveguide, thick cladding layer with high Mg composition (Mg %) is needed. However, the in-plane lattice mismatch of the fabricated device with high Mg % and thick cladding layer was large. It might cause the cladding/core interface roughness and asperities due to the misfit dislocation, and degrade the device performance. Because EO property of waveguide device is primarily influence by the structure thickness, the device efficiency improvement in this study was only considered to reduce the defects asperities that would cause propagation loss without decreasing the Mg % or the total thickness of the cladding layers. Therefore, we introduced a low Mg % layer between the cladding and the core layer to circumvent the effect of large lattice mismatch. The in-plane lattice mismatch of the devices was monitored using reciprocal space mapping, and surface morphologies were also observed using atom force microscope. The two-step index ZnMgTe/ZnTe waveguide had shown to have lower degree of relaxation compared to that of single-step index waveguide device with close Mg % and cladding layer thickness. Therefore, the crystal degradation of the two-step-index waveguide caused by lattice mismatch was successfully suppressed by introduction extra low Mg % layers. The morphologies of the two kinds of waveguide structures have similar surface asperities, which indicated the extra inserted layers did not produce additional large scale asperities at the interfaces that would increase the propagation loss.

Keywords

molecular beam epitaxy (MBE)Znoptoelectronic
Type
Articles
Information
MRS Advances , Volume 1 , Issue 23: Electronics and Photonics , 2016 , pp. 1721 - 1727
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Sharkawy, A., Shi, S. and Prather, D. W., Opt. Expr. 1, 20, 1048 (2002)Google Scholar
Chmielak, B., Waldow, M., Matheisen, C., Ripperda, C., Bolten, J., Wahlbrink, T., Nagel, M., Merget, F., and Kurz, H., Opt. Expr. 19, 18, 17212 (2011)Google Scholar
Koch, M. H., Timbrell, P. Y. and Lamb, R. N., Semicond. Sci. Technoi. 10, 11 (1995)Google Scholar
Marple, D. T. F., Appl, J.. Phys. 35, 539 (1964)Google Scholar
Kumagai, Y., Imada, S., Baba, T., Kobayashi, M., J. Cryst. Growth 323, 1 (2011)Google Scholar
Lee, G., Lee, M. H. and Ihm, J., Phys. Rev. B 52, 1459 (1995)Google Scholar
Asano, T., Funato, K., Nakamura, F., Ishibashi, A., J. Cryst. Growth 156, 4, 373 (1995)Google Scholar
People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985)CrossRefGoogle Scholar
Andersson, T. G., Chen, Z. G., Kulakovskii, V. D., Uddin, A. and Vallin, J. T., Appl. Phys. Lett. 51, 752 (1987)Google Scholar
Orders, P. J. and Usher, B. F., Appl. Phys. Lett. 50, 980 (1987)Google Scholar
Matthews, J.W. and Blakeslee, A.E., J. Crys. Grow. 27, 118 (1974)Google Scholar
Imada, S., Baba, T., Sakurasawa, S. and Kobayashi, M., Phys. Stat. Sol. (c) 7, 6 (2010)Google Scholar
Sun, W., Nakasu, T., Taguri, K., Aiba, T., Yamashita, S., Kobayashi, M., Togo, H., Asahi, T., Phys. Stat. Sol. (c) 11, 7 (2014)Google Scholar
Kumagai, Y. and Kobayashi, M., Jpn. J. Appl. Phys. 51, 2S (2012)Google Scholar
Sugimoto, Y., Tanaka, Y., Ikeda, N., Nakamura, Y., Asakawa, K., and Inoue, K., Opt. Expr. 12, 6, 1090 (2004)Google Scholar
Sun, W.: in preparation for publicationGoogle Scholar
Sanchez-Gil, J. A., and Nieto-Vesperinas, M.., J. Opt. Soc. Am, A 8.8, 1270, (1991)Google Scholar
Fitzgerald, E. A., Xie, Y.-H., Green, M. L., Brasen, D., Kortan, A. R., Michel, J., Mii, Y.-J, and Weir, B. E., Appl. Phys. Lett. 59, 7, (1991)Google Scholar
Kavanagh, K. L., Chang, J. C. P., Chen, J., Fernandez, J. M., and Wieder, H. H., J. Vac. Sci. Technol. B 10, 1820 (1992)Google Scholar
Mooney, P. M., Jordan-Sweet, J. L., Chu, J. O. and LeGoues, F. K., Appl. Phys. Lett. 66, 3642 (1995)Google Scholar
Di Luccio, T., et al. , J. Appl. Phys, 97.8, 083540 (2005)Google Scholar