Skip to main content Accessibility help

Engineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalation

  • U. Starke (a1), S. Forti (a2), K.V. Emtsev (a3) and C. Coletti (a4)


Homogeneous graphene layers can be grown epitaxially on SiC(0001), promising scalable graphene technology. However, covalent bonds at the SiC–graphene interface induce strong n-doping of the graphene. This doping can be compensated by functionalizing the graphene surface with electronegative molecules. Alternatively, the influence of the substrate can be largely suppressed by breaking the covalent bonds through atomic intercalation. Hydrogen atoms migrate under the graphene, passivate the underlying SiC layer, and decouple the graphene from the substrate. In this way, large-scale, homogeneous, quasi-free-standing graphene layers can be achieved. By intercalation of germanium, the electronic structure of the decoupled graphene can be tailored. Two symmetrically doped, namely, n- and p-type, phases are stabilized, depending on the amount of intercalated germanium. This is achieved by annealing a germanium film at various temperatures after it is initially deposited on the covalently bonded carbon layer. In an intermediate temperature regime, lateral pn junctions between the two phases can be formed, size-tailored on a mesoscopic scale.



Hide All
1.Emtsev, K.V., Speck, F.Seyller, Th., Ley, L., Riley, J.D., Phys. Rev. B 77, 155303 (2008).
2.Riedl, C., Zakharov, A.A., Starke, U., Appl. Phys. Lett. 93, 033106 (2008).
3.Berger, C., Song, Z., Li, X., Wu, X., Brown, N., Naud, C., Mayou, D., Li, T., Hass, J., Marchenkov, A.N., Conrad, E.H., First, P.N., de Heer, W.A., Science 312, 1191 (2006).
4.First, P.N., de Heer, W.A., Seyller, T., Berger, C., Stroscio, J.A., Moon, J.-S., Mater. Res. Soc. Bull. 35, 296 (2010).
5.Hiebel, F., Mallet, P., Varchon, F., Magaud, L., Veuillen, J.-Y., Phys. Rev. B 78, 153412 (2008).
6.Starke, U., Riedl, C., J. Phys.: Condens. Matter 21, 134016 (2009).
7.Coletti, C., Riedl, C., Lee, D.S., Patthey, L., Klitzing, K.V., Smet, J.H., Starke, U., Phys. Rev. B 81, 235401 (2010).
8.Riedl, C., Coletti, C., Iwasaki, T., Zakharov, A.A., Starke, U., Phys. Rev. Lett. 103, 246804 (2009).
9.Forti, S., Emtsev, K.V., Coletti, C., Zakharov, A.A., Riedl, C., Starke, U., Phys. Rev. B 84, 125449 (2011).
10.Emtsev, K., Zakharov, A.A., Coletti, C., Forti, S., Starke, U., Phys. Rev. B 84, 125423 (2011).
11.Al-Temimy, A., Riedl, C., Starke, U., Appl. Phys. Lett. 95, 231907 (2009).
12.Moreau, E., Ferrer, F.J., Vignaud, D., Godey, S., Wallart, X., Phys. Status Solidi A 207, 300 (2010).
13.Maeda, F., Hibino, H.J. Phys. D: Appl. Phys. 44, 435305 (2011).
14.Strupinski, W., Grodecki, K., Wysmolek, A., Stepniewski, R., Szkopek, T., Gaskell, P.E., Grüneis, A., Haberer, D., Bozek, R., Krupka, J., Baranowski, J.M., Nano Lett. 11, 1786 (2011).
15.Soubatch, S., Saddow, S.E., Rao, S.P., Lee, W.Y., Konuma, M., Starke, U., Mater. Sci. Forum 483485, 761 (2005).
16.Frewin, C.L., Coletti, C., Riedl, C., Starke, U., Saddow, S.E., Mater. Sci. Forum 615617, 589 (2009).
17.Ramachandran, V., Brady, M.F., Smith, A.R., Feenstra, R.M., Greve, D.W., J. Electron. Mater. 27, 308 (1998).
18.Chaussende, D., Latu-Romain, L., Auvray, L., Ucar, M., Pons, M., Madar, R., Mater. Sci. Forum 483485, 225 (2005).
19.Ohta, T., Bostwick, A., McChesney, J.L., Seyller, T., Horn, K., Rotenberg, E., Phys. Rev. Lett. 98, 206802 (2007).
20.Riedl, C., Starke, U., Bernhardt, J., Franke, M., Heinz, K., Phys. Rev. B 76, 245406 (2007).
21.Charrier, A., Coati, A., Argunova, T., Thibaudau, F., Garreau, Y., Pinchaux, R., Forbeaux, I., Debever, J.M., Sauvage-Simkin, M., Themlin, J.M., J. Appl. Phys. 92, 2479 (2002).
22.Hass, J., Feng, R., Li, T., Li, X., Zong, Z., Heer, W.A.d., First, P.N., Conrad, E.H., Jeffrey, C.A., Berger, C., Appl. Phys. Lett. 89, 143106 (2006).
23.Gong, G., Shu, N., Feenstra, R.M., Devaty, R.P., Choyke, W.J., Winston, K.C., Michael, G.K., Appl. Phys. Lett. 90, 253507 (2007).
24.Hibino, H., Kageshima, H., Maeda, F., Nagase, M., Kobayashi, Y., Kobayashi, Y., Yamaguchi, H., e-J. Surf. Sci. Nanotechnol. 6, 107 (2008).
25.Ohta, T., El Gabaly, F., Bostwick, A., McChesney, J.L., Emtsev, K.V., Schmid, A.K., Seyller, T., Horn, K., Rotenberg, E., New J. Phys. 10, 023034 (2008).
26.Emtsev, K.V., Bostwick, A., Horn, K., Jobst, J., Kellogg, G.L., Ley, L., McChesney, J.L., Ohta, T., Reshanov, S.A., Rotenberg, E., Schmid, A.K., Waldmann, D., Weber, H.B., Seyller, Th., Nat. Mater. 8, 203 (2009).
27.Virojanadara, C., Yakimova, R., Osiecki, J.R., Syvajarvi, M., Uhrberg, R.I.G., Johansson, L.I., Zakharov, A.A., Surf. Sci. 603, L87 (2009). Heer, W.A., Berger, C., Ruan, M., Sprinkle, M., Li, X.B., Hu, Y.K., Zhang, B.Q., Hankinson, J., Conrad, E., Proc. Natl. Acad. Sci. 108, 16900 (2011).
29.Riedl, C., Coletti, C., Starke, U., J. Phys. D: Appl. Phys. 43, 374009 (2010).
30.Speck, F., Ostler, M., Roehrl, J., Jobst, J., Waldmann, D., Hundhausen, M., Ley, L., Weber, H.B., Seyller, T., Mater. Sci. Forum 645648, 629 (2010).
31.Bostwick, A., Speck, F., Seyller, T., Horn, K., Polini, M., Asgari, R., MacDonald, A.H., Rotenberg, E., Science 328, 999 (2010).
32.Walter, A., Bostwick, A., Jeon, K.-J., Speck, F., Ostler, M., Seyller, Th., Moreschini, L., Chang, Y.J., Polini, M., Asgari, R., MacDonald, A.H., Horn, K., Rotenberg, E., Phys. Rev. B 84, 085410 (2011).
33.Tanabe, S., Sekine, Y., Kageshima, H., Hibino, H., Jpn. J. Appl. Phys. 51, 02BN02 (2012).
34.Lee, K., Kim, S., Points, M.S., Beechem, T.E., Ohta, T., Tutuc, E., Nano Lett. 11, 3624 (2011).
35.Robinson, J.A., Hollander, M., LaBella, M., Trumbull, K.A., Cavalero, R., Snyder, D.W., Nano Lett. 11, 3875 (2011).
36.Virojanadara, C., Zakharov, A.A., Yakimova, R., Johansson, L.I., Surf. Sci. 604, L4 (2010).
37.Watcharinyanon, S., Virojanadara, C., Osiecki, J.R., Zakharov, A.A., Yakimova, R., Uhrberg, R.I.G., Johansson, L.I., Surf. Sci. 605, 1662 (2011).
38.Starke, U., in Silicon Carbide, Recent Major Advances, Choyke, W.J., Matsunami, H., Pensl, G., Eds. (Springer, New York, 2004), pp. 281316.
39.Goler, S., Coletti, C., Piazza, V., Pingue, P., Colangelo, F., Pellegrini, V., Emtsev, K.V., Forti, S., Starke, U., Beltram, F., Heun, S., Carbon 51, 249 (2013).
40.Hannon, J.B., Copel, M., Tromp, R.M., Phys. Rev. Lett. 107, 166101 (2011).
41.Bostwick, A., Ohta, T., Seyller, Th., Horn, K., Rotenberg, E., Nat. Phys. 3, 36 (2007).
42.Zhou, S.Y., Gweon, G.-H., Fedorov, A.V., First, P.N., de Heer, W.A., Lee, D.-H., Guinea, F., Castro Neto, A.H., Lanzara, A., Nat. Mater. 6, 770 (2007).
43.Ohta, T., Bostwick, A., Seyller, Th., Horn, K., Rotenberg, E., Science 313, 951 (2006).
44.Ristein, J., Science 313, 1057 (2006).
45.Chen, W., Qi, D.C., Gao, X.Y., Wee, A.T.S., Prog. Surf. Sci. 84, 279 (2009).
46.Gierz, I., Riedl, C., Starke, U., Ast, C.R., Kern, K., Nano Lett. 8, 4603 (2008).
47.Riedl, C., Coletti, C., Iwasaki, T., Zakharov, A.A., Starke, U., Mater. Sci. Forum 645648, 623 (2010).
48.Coletti, C., Emtsev, K.V., Zakharov, A.A., Ouisse, T., Chaussende, D., Starke, U., Appl. Phys. Lett. 99, 081904 (2011).
49.Ristein, J., Mammadov, S., Seyller, Th., Phys. Rev. Lett. 108, 246104 (2012)
50.Coletti, C., Forti, S., Principi, A., Emtsev, K.V., Zakharov, A., Daniels, K., Daas, B., Chandrashekhar, M.V.S., Ouisse, T., Chaussende, D., Polini, M., Starke, U., in preparation.
51.Hibino, H., Kageshima, H., Maeda, F., Nagase, M., Kobayashi, Y., Yamaguchi, H., Phys. Rev. B 77, 075413 (2008).
52.Deretzis, I., La Magna, A., Appl. Phys. Express 4, 125101 (2011).
53.Gierz, I., Suzuki, T., Weitz, R.T., Lee, D.S., Krauss, B., Riedl, C., Starke, U., Höchst, H., Smet, J.H., Ast, C.R., Kern, K., Phys. Rev. B 81, 235408 (2010).
54.Chuang, F.C., Lin, W.H., Huang, Z.-Q., Hsu, C.H., Kua, C.C., Ozolins, V., Yeh, V., Nanotechnology 22, 275704 (2011).
55.Hsu, C.H., Lin, W.H., Ozolins, V., Chuang, F.C., Appl. Phys. Lett. 100, 063115 (2012).
56.Virojanadara, C., Watcharinyanon, S., Zakharov, A.A., Johansson, L.I., Phys. Rev. B 82, 205402 (2010).
57.Watcharinyanon, S., Johansson, L.I., Zakharov, A.A., Virojanadara, C., Surf. Sci. 606, 401 (2012).
58.Watcharinyanon, S., Johansson, L.I., Xia, C., Virojanadara, C., J. Appl. Phys. 111, 083711 (2012).
59.Deretzis, I., La Magna, A., Phys. Rev. B 84, 235426 (2011).
60.Sandin, A., Jayasekera, T., Rowe, J.E., Kim, K.W., Buongiorno Nardelli, M., Dougherty, D.B., Phys. Rev. B 85, 125410 (2012).
61.Xia, C., Watcharinyanon, S., Zakharov, A.A., Yakimova, R., Hultman, L., Johansson, L.I., Virojanadara, C., Phys. Rev. B 85, 045418 (2012).
62.Katsnelson, M.I., Novoselov, K.S., Geim, A.K., Nat. Phys. 2, 620 (2006).
63.Cheianov, V.V., Fal’ko, V., Altshuler, B.L., Science 315, 1252 (2007).


Related content

Powered by UNSILO

Engineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalation

  • U. Starke (a1), S. Forti (a2), K.V. Emtsev (a3) and C. Coletti (a4)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.