For surface science, the 1980s were the decade in which the microscopes arrived. The scanning tunneling microscope (STM) was invented in 1982. Ultrahigh vacuum transmission electron microscopy (UHVTEM) played a key role in resolving the structure of the elusive Si(111)-7 × 7 surface. Scanning electron microscopy (SEM) as well as reflection electron microscopy (REM) were applied to the study of growth and islanding. And low-energy electron microscopy (LEEM), invented some 20 years earlier, made its appearance with the work of Telieps and Bauer.

LEEM and TEM have many things in common. Unlike STM and SEM, they are direct imaging techniques, using magnifying lenses. Both use an aperture to select a particular diffracted beam, which determines the nature of the contrast. If the direct beam is selected (no parallel momentum transfer), a bright field image is formed, and contrast arises primarily from differences in the scattering factor. A dark field image is formed with any other beam in the diffraction pattern, allowing contrast due to differences in symmetry. In LEEM, phase contrast is the third important mechanism by which surface and interface features such as atomic steps and dislocations may be imaged. One major difference between TEM and LEEM is the electron energy: 100 keV and above in TEM, 100 eV and below in LEEM. In LEEM, the imaging electrons are reflected from the sample surface, unlike TEM where the electrons zip right through the sample, encountering top surface, bulk, and bottom surface. STM and TEM are capable of ~2 Å resolution, while LEEM and SEM can observe surface features (including atomic steps) with -100 Å resolution.