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1.54 μm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC

Published online by Cambridge University Press:  10 February 2011

M. Yoganathan ,
W. J. Choyke ,
R. P. Devaty ,
G. Pensl  and
J. A. Edmond
M. Yoganathan
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, CHOYKE @POP.PITT.-EDU
W. J. Choyke
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, CHOYKE @POP.PITT.-EDU
R. P. Devaty
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, CHOYKE @POP.PITT.-EDU
G. Pensl
Affiliation:
Lehrstuhl Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstrasse 7, D-91058, Erlangen, Germany
J. A. Edmond
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, North Carolina 27713
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Abstract

Photoluminescence in the neighborhood of 1.54μm due to the 4I13/2 → 4l15/2 transitions is observed from 2 K up to 520 K in erbium implanted 6H SiC. The integrated 1.54 μm photoluminescence (PL) intensity is almost constant from 2 K up to about 400 K, with slight sample to sample variation. The shallow nitrogen donors play an important role in the excitation of the Er3+ centers. 1.54 μm electroluminescence (EL) is observed in erbium implanted 6H SiC p-n junctions under forward bias conditions. The EL spectrum is identical to the PL spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 339
Copyright
Copyright © Materials Research Society 1996

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