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1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

Published online by Cambridge University Press:  01 June 2015

V.C. Lopes ,
A.J. Syllaios ,
D. Whitfield ,
K. Shrestha  and
C.L. Littler
V.C. Lopes
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
A.J. Syllaios
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
D. Whitfield
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
K. Shrestha
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
C.L. Littler
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
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Abstract

We report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

Keywords

amorphousSielectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1770: Symposium A – Emerging Silicon Science and Technology , 2015 , pp. 25 - 30
Copyright
Copyright © Materials Research Society 2015 

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References

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