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Annealing of Nanocrystalline Silicon Micro-bridges with Electrical Stress

Published online by Cambridge University Press:  01 February 2011

Gokhan Bakan
Affiliation:
gob07002@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Adam Cywar
Affiliation:
adam.cywar@gmail.com, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Cicek Boztug
Affiliation:
cicek@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Mustafa Bilal Akbulut
Affiliation:
mustafa@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Helena Silva
Affiliation:
silva@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Ali Gokirmak
Affiliation:
gokirmak@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
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Abstract

Nanocrystalline silicon (nc-Si) micro-bridges are melted and crystallized through Joule heating by applying high-amplitude short duration voltage pulses. Full crystallization of nc-Si bridges is achieved by adjusting the voltage-pulse amplitude and duration. If the applied pulse cannot deliver enough energy to the bridges, only surface texture modification is observed. On the contrary, if the pulse is not terminated after the entire bridge melts, molten silicon diffuses on to the contact pads and the bridge tapers in the middle. Melting of the bridges can be monitored through current-time (I-t) and voltage-time (V-t) measurements during the electrical stress. Conductance of the bridges is enhanced after the electrical stress.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

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