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Effect of Boron on Polytype Phase Transformation Occurring During Sintering of Si-C-B Powders Obtained By Combustion (SHS)

Published online by Cambridge University Press:  10 February 2011

S. Gierlotka ,
S. Stel'makh  and
B. Palosz
S. Gierlotka
Affiliation:
High Pressure Research Centre, Polish Academy of Sciences UNIPRESS, Sokolowska 29, 01–142 Warsaw, Poland
S. Stel'makh
Affiliation:
High Pressure Research Centre, Polish Academy of Sciences UNIPRESS, Sokolowska 29, 01–142 Warsaw, Poland
B. Palosz
Affiliation:
High Pressure Research Centre, Polish Academy of Sciences UNIPRESS, Sokolowska 29, 01–142 Warsaw, Poland
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Abstract

Silicon carbide powders were synthesized by SHS method with boron added in various quantities as either amorphous elemental or boric acid additive. The powder samples were then heat treated at a selected temperature (up to 22000°C). Crystallographic structure of the powders were analyzed by means of X-ray powder diffraction technique. It was found that boron added in the form of H3BO3 tends to precipitate in the form of small clusters and does not dissolve evenly in the SiC lattice. Upon annealing the boron clusters dissociate. The boron atoms diffusing across the SiC lattice generate a large number of stacking faults with simultaneous transformation of hexagonal polytype 6H (α-phase) present in as-synthesized powders into the cubic 3C (βphase) modification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 229
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Heine, V., Cheng, C., Needs, R., J. Am. Ceram. Soc. 74, p. 2630–2633 (1991)Google Scholar
2. Yoshida, M., Onodera, A., Ueno, M., Takemura, K., Shimomura, O., Phys. Rev. B48, p. 10587–10590 (1993)Google Scholar
3. Pampuch, R., Lis, J., Stobierski, L., Ermer, E., Int. J. SHS 2, p. 49–55 (1993)Google Scholar
4. Young, R., Sakhtivel, A., J. Appl. Cryst. 21, p. 416–425 (1988)Google Scholar
5. Palosz, B., Stel'makh, S., Gierlotka, S., MRS Fall Meeting, Boston MA 1995 Google Scholar
6. Gierlotka, S., Oleksyn, O., Palosz, B., Mat. Sci. Forum 166–169, p. 529–538 (1994).Google Scholar
7. Kalinina, A., Sokhor, M., Shamrai, F., Izv. Akad. Nauk SSSR, Neorg. Mat. 7, p.778–783 (1971) in RussianGoogle Scholar
8. Pezold, J., Mat. Sci. & Eng. B29, p.99–104 (1995)Google Scholar