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A High-Voltage Hydrogenated Amorphous Silicon Thin-Film Transistor for Reflective Active-Matrix Cholesteric LCD

Published online by Cambridge University Press:  10 February 2011

J.Y. Nahm ,
J.H. Lan  and
J. Kanicki
J.Y. Nahm
Affiliation:
Center for Integrated Microsystems Department of Electrical Engineering and Computer Science University of Michigan, Ann Arbor, Michigan 48105, USA
J.H. Lan
Affiliation:
Center for Integrated Microsystems Department of Electrical Engineering and Computer Science University of Michigan, Ann Arbor, Michigan 48105, USA
J. Kanicki
Affiliation:
Center for Integrated Microsystems Department of Electrical Engineering and Computer Science University of Michigan, Ann Arbor, Michigan 48105, USA
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Abstract

A high-voltage hydrogenated amorphous silicon thin film transistor (H-V a-Si:H TFT) with thick double layer gate insulator (∼0.95 μm) has been developed for reflective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 μm thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-tosource and drain-to-source biases up to 100V without any serious leakage current degradation and device breakdown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 125
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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