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Impact of Template Layers on Dielectric and Electrical Properties of Pulsed-Laser Ablated Pb(Mg1/3 Nb2/3)O3 - PbTiO3 Thin Films

Published online by Cambridge University Press:  17 March 2011

Apurba Laha
Materials Research Centre, Indian Institute of Science, Bangalore -560 012, INDIA
S. Saha
Materials Science Division Argonne National Laboratory, 9700, S. Cass Avenue, Argonne, IL-60439, USA
S. B. Krupanidhi
Materials Research Centre, Indian Institute of Science, Bangalore -560 012, INDIA
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A study was done on pulsed laser deposited relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) deposited on platinized silicon substrates with template layers to observe the influence of the template layers on physical and electrical properties. Initial results, showed that perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on Pt/Ti/SiO2/Si substrates. The films were grown at 300°C and then annealed in a rapid thermal annealing furnace in the temperature range of 750-850°C to induce crystallization. Comparison of the films annealed at different temperatures revealed a change in crystallinity, perovskite phase formation and grain size. These results were further used to improve the quality of the perovskite PMN-PT phase by inserting thin layers of TiO2 on the Pt substrate. These resulted in an increase in perovskite phase in the films even at lower annealing temperatures. Dielectric studies on the PMN-PT films show very high values of dielectric constant (1300) at room temperature, which further improved with the insertion of the template seed layer. The relaxor properties of the PMN-PT were correlated with Vogel-Fulcher theory to determine the actual nature of the relaxation process.

Research Article
Copyright © Materials Research Society 2002

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1. Smolenskii, G. A., Isupov, V. A., Agranovskay, A. I., and Popov, S. N., Soviet Physics - Solid State, 2, 2584 (1961).Google Scholar
2. Cross, L.E., Ferroelectr. 76, 241 (1987).Google Scholar
3. Udaykumar, K.R., Chen, J., Schuele, P.J., Cross, L.E., and Krupanidhi, S.B., Appl. Phys. Lett, 60, 1187 (1992).Google Scholar
4. Namura, S. and Uchino, K., Ferroelectr. 50, 197 (1983).Google Scholar
5. Uchino, K., Ceramic Bull. 65, 649 (1986).Google Scholar
6. Uchino, K., Namura, S., Cross, L.E., Newnham, R.E., and Jang, S.J., J. Mater. Sci. 16, 1569 (1981).Google Scholar
7. Tantigate, C. and Safari, A., Microelectronic Engg. 29, 115 (1995).Google Scholar
8. Nakamura, S., Masuda, S., Morimoto, A., and Shimizu, T., Jpn. J. Appl. Phys. 35, 4750 (1996).Google Scholar
9. Maria, J. P., Hackenberger, W., and Trolier-Mckinstry, S., J. Appl. Phys. 84, 5147 (1998).Google Scholar
10. Swartz, S. L. and Shrout, T. R., Mat. Res. Bull. 17, 1245 (1982).Google Scholar
11. Kighelman, Z., Damjanovic, D. and Setter, N., J. Appl. Phys. 90, 4682 (2001).Google Scholar
12. Swartz, S. L. and Shrout, T. R., Mat. Res. Bull., 72, 1335 (1989).Google Scholar
13. Saha, S. and Krupanidhi, S.B., Mat. Sci. Eng B, 57, 135 (1999).Google Scholar
14. Tholence, J., J. Appl. Phys. 50, 7369 (1979).Google Scholar
15. Shtrikman, S. and Wohlfarth, E., Phys. Lett. 85 A, 467 (1981).Google Scholar