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Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Ronald A. Arif ,
Nam-Heon Kim ,
Luke J. Mawst  and
Nelson Tansu
Ronald A. Arif
Affiliation:
raa4@lehigh.edu, Lehigh University, Department of Electrical and Computer Engineering, 7 Asa Drive, Sinclair Lab Rm 218, Bethlehem, Pennsylvania, 18015, United States, (610) 758-4326, (610) 758-2605
Nam-Heon Kim
Affiliation:
namheonkim@wisc.edu, University of Wisconsin-Madison, Department of Electrical and Computer Engineering, United States
Luke J. Mawst
Affiliation:
mawst@engr.wisc.edu, University of Wisconsin-Madison, Department of Electrical and Computer Engineering, United States
Nelson Tansu
Affiliation:
tansu@lehigh.edu, Lehigh University, Department of Electrical and Computer Engineering, United States
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Abstract

Self-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

Keywords

semiconductinglasermetalorganic deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE02-05
Copyright
Copyright © Materials Research Society 2006

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References

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