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Measurements of Liquid Silicon Resistivity on Silicon Microwires

Published online by Cambridge University Press:  31 January 2011

Gokhan Bakan
Affiliation:
gokhan@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Kadir Cil
Affiliation:
kadir.cil@uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Adam Cywar
Affiliation:
adam.cywar@gmail.com, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Helena Silva
Affiliation:
silva@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Ali Gokirmak
Affiliation:
gokirmak@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
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Abstract

Nanocrystalline silicon microwires are self-heated through microsecond voltage pulses. Nonlinear changes in current level are observed during the voltage pulse, which end with melting of the microwires. Liquid silicon resistivity is extracted as 65.9 ± 6.1 μΩ.cm from the minimum resistance of the wire during the voltage pulse. The extracted resistivity is in good agreement with previously reported values.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

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