Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-30T06:02:57.417Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure and Resistivity OFCr75 Si25 Thin Films

Published online by Cambridge University Press:  28 February 2011

B. Z. Weiss ,
K. N. Tu  and
D. A. Smith
B. Z. Weiss
Affiliation:
Materials Engineering Department, Technion - Israel Institute of Technology, Haifa, 32000, Israel
K. N. Tu
Affiliation:
Materials Engineering Department, Technion - Israel Institute of Technology, Haifa, 32000, Israel
D. A. Smith
Affiliation:
Materials Engineering Department, Technion - Israel Institute of Technology, Haifa, 32000, Israel
Get access

Abstract

The electrical and microstructural changes of initially amorphous Cr75Si25 thin coevaporated alloy films have been studied as a function of temperature from room temperature to 950°C. Crystallization occurs in two stages. In the “primary” stage the major portion of the amorphous film crystallizes and a steep drop in resistivity occurs. In the “secondary” stage the amorphous residue crystallizes and is accompanied by a further gradual decrease in resistivity. The resistivity depends linearly on the volume fraction Vτ(t) crystallized to give Cr3Si only for Vτ(t) < 0.35.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 333
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hansen, M. and Anderko, K., Constitution of Binary Alloys, second edition reprinted by Genium Publishing Corp. by arrangement with McGraw-Hill, January 1985, Schenectady, NY, 560.Google Scholar
2. Chang, Y. A., Trans. AIME 242, 1509 (1968).Google Scholar
3. Nikitin, E. N., J. Tech. Phys. USSR 28, 73 (1958).Google Scholar
4. Guseva, L. N. and Ovechkin, B. I., Proc. Acad. Sci. USSR 112, 681 (1957).Google Scholar
5. Mayer, S. E. and Mlavsky, A. I., Properties of Element and Compound Semiconductor, edited by Gatos, H. C., Interscience, New York, 261 (1960).Google Scholar
6. Shinoda, D., Asanabe, S. and Sasaki, Y., J. Phys. Society, Japan 19, 269 (1964).Google Scholar
7. Nishida, I. and Sakata, T., J. Phys. Chem. Solids 39, 499 (1978).Google Scholar
8. Franciosi, A., Weaver, J. H., O'Neal, D. G., Rowe, J. E., Poate, J. M., Bisi, O. and Calandra, C., J. Vac. Sci. Tech. 21, 624 (1982).Google Scholar
9. Suchet, J. P., Crystal Chemistry and Semiconduction in Transition Metal Binary Compounds, Academic Press, New York, 101 (1971).Google Scholar
10. Nava, F., Tien, T. and Tu, K. N., J. Appl. Phys. 57, 2018 (1985).Google Scholar
11. Chaplanov, A. M., Rokova, N. A. and Rossinski, V. A., Fiz. and Khim. Obrab. Mater. (USSR) 7, 89 (1981).Google Scholar
12. Avrami, M., J. Chem. Phys. 7, 1103 (1940); J. Phys. Chem. Solids 8, 212 (1941).Google Scholar