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Model of the Semiconductor-to-Semimetal Transition Modulation at Teraherz Frequencies

Published online by Cambridge University Press:  01 January 1992

T. K. Cheng ,
L. Acioli ,
J. Vidal ,
H. J. Zeiger ,
E. P. Ippen ,
G. Dresselhaus  and
M. S. Dresselhaus
T. K. Cheng
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139
L. Acioli
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139
J. Vidal
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139
H. J. Zeiger
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139
E. P. Ippen
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139
G. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139
M. S. Dresselhaus
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139
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Abstract

We present experimental data which show that large amplitude coherent lattice vibrations can be impulsively excited using short optical pulses of light. Furthermore, using a quasi-equilibrium model, we show how the these coherent lattice vibrations suggest a ~ 7 THz modulation of the semiconductor-to-metal transition in Ti2O3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 291: Symposium O – Materials Theory and Modeling , 1992 , 619
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 De Silvestri, S., Fujimoto, J.G., Ippen, E.P., Bamble, E.B. Jr., Williams, L.R. and Nelson, K.A., Chem. Phys. Lett. 116, 146 (1985).Google Scholar
2 Rosker, M.J., Wise, F.W. and Tang, C.L., Phys. Rev. Lett. 57, 321 (1986).Google Scholar
3 Yan, Y.X. and Nelson, K.A., J. Chem. Phys. 83, 5391 (1986); Yan, Y.X. and Nelson, K.A., J. Chem. Phys. 87, 6257 (1987).Google Scholar
4 Chesnoy, J. and Mokhtari, A., Phys. Rev A 38, 3566 (1988).Google Scholar
5 Cheng, T.K., Brorson, S.D., Kazeroonian, A.K., Moodera, J.S., Dresselhaus, G., Dresselhaus, M.S., Ippen, E.P., Appl. Phys. Lett. 57, 1004 (1990); H.J. Zeiger, Vidal, J., Cheng, T.K., Ippen, E.P., Dresselhaus, G. and Dresselhaus, M.S., Phys. Rev. B 45, 768 (1992).Google Scholar
6 Cho, G.C., Kutt, W.A. and Kurz, H., Phys. Rev. Lett. 65, 764 (1990); Kutt, W.A., Albrecht, W. and Kurz, H., J. Quant. Elect. 28, 2434 (1992).Google Scholar
7 Chwalek, J.M., Uher, C., Whitaker, J.F., Mourou, G.A. and Agostinelli, J.A., Appl. Phys. Lett. 58, 980 (1991).Google Scholar
8CPM - Fork, R. L., Greene, B. I. and Shank, C. V., Appl. Phys. Lett. 38, 671 (1981); CVL - Knox, W., Downer, M., Fork, R. and Shank, C. V. Opt. Lett. 9, 552 (1984).Google Scholar
9 Shin, S. H., Aggarwal, R.L., Lax, B., and Honig, J.M., Phys. Rev. B 9, 583 (1974).Google Scholar
10 Van Zandt, L.L., Honig, J.M. and Goodenough, J.B., J. Appl. Phys., 39, 594 (1968).Google Scholar
11 Rice, C. E. and Robinson, W. R., Acta Cryst B 33, 1342 (1977).Google Scholar