Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-30T02:09:52.640Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphology of Ti37Al63 Thin-Films Deposited by Magnetron Sputtering

Published online by Cambridge University Press:  17 March 2011

N. David Theodore ,
Hyunchul C. Kim ,
Kaustubh S. Gadre ,
James W. Mayer  and
Terry L. Alford
N. David Theodore
Affiliation:
DigitalDNA™ Labs., Motorola Inc., 2100 E. Elliot Rd., MD-EL622, Tempe, AZ 85284, U.S.A
Hyunchul C. Kim
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
Kaustubh S. Gadre
Affiliation:
Intel Corp., RA3-402, 2501 NW 229th St., Hillsboro, OR 97124, U.S.A
James W. Mayer
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
Terry L. Alford
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287, U.S.A
Get access

Abstract

TiAl based thin-films possess high oxidation-resistance and high melting points, making them possible candidates for application in electronics. The behavior of the films upon exposure to various temperatures is of interest for such application. In the present study, Ti37Al63 thin films were deposited onto SiO2 substrates using RF magnetron sputtering from a compound target. Anneals were performed in vacuum at temperatures ranging from 400 °C to 700 °C. The phases and microstructural behavior of the films were evaluated as a function of annealing. Microstructural behavior was correlated with resistivity changes in the films. The behavior of Ti-Al films as potential under-layers for silver metallization was also evaluated. The Ti-Al was observed to enhance the thermal stability of pure Al thin-films. The results are relevant for potential application of the films to electronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F3.25
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zhang, J., Reddy, B. V., Deevi, S. C., Scripta Mater. 45, 645 (2001).CrossRefGoogle Scholar
2. Veeraraghavan, D., Pilchowski, U., Natarajan, B., Vasudevan, V. K., Acta Mater. 46, 405 (1998).CrossRefGoogle Scholar
3. Viera, T., Trindade, B., Ramos, A.S., Fernandes, J.V., Vieira, M.F., Mat. Sci. Eng. A329–331, 147 (2002).CrossRefGoogle Scholar
4. Senkov, N., Uchic, M.D., Mat. Sci. Eng. A340, 216 (2003).CrossRefGoogle Scholar
5. Wang, Z., Shao, G., Tsakiropoulos, P., Wang, F., Mat. Sci. Eng. A329–331, 141 (2002).CrossRefGoogle Scholar
6. Banerjee, R., Swaminathan, S., Wiezorek, J.M.K., Wheeler, R., Fraser, H.L., Metall. Mater. Trans. A 27, 2047 (1996).CrossRefGoogle Scholar
7. Lei, C., Xu, Q., Sun, Y.Q., Mat. Sci. Eng. A313, 227 (2001).CrossRefGoogle Scholar
8. Herzig, C., Przeorski, T., Mishin, Y., Intermetallics 7, 389 (1999).CrossRefGoogle Scholar
9. Herzig, C., Friesel, M., Derdau, D., Divinski, S.V., Intermetallics 7, 1141 (1999).CrossRefGoogle Scholar
10. Herzig, C., Wilger, T., Przeorski, T., Hisker, F., Divinski, S., Intermetallics 9, 431 (2001).CrossRefGoogle Scholar
11. Kim, H.C., Theodore, N.D., Gadre, K.S., Mayer, J.W., Alford, T.L., in press, Thin Solid Films, (2004).Google Scholar
12. Kittel, C., Introduction to Solid State Physics, 7th ed. (Willey, New York, 1996), p. 530.Google Scholar
13. Mooij, J. H., Phys. Stat. Sol (a) 17, 521 (1973).CrossRefGoogle Scholar
14. Shirai, Y., Masaki, K., Inoue, T., Nishitani, S. R., Yamaguchi, M., Intermetallics 3, 381 (1995).CrossRefGoogle Scholar