Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-04-30T09:59:56.668Z Has data issue: false hasContentIssue false

Photoemission Exafs from InP(110) and Al/InP(110)

Published online by Cambridge University Press:  21 February 2011

K. M. Choudhary
Affiliation:
University of Notre Dame, Materials Science and Engineering, Notre Dame, Indiana 46556
P. S. Mangat
Affiliation:
University of Notre Dame, Materials Science and Engineering, Notre Dame, Indiana 46556
D. Kilday
Affiliation:
Synchrotron Radiation Center and Department of Physics, University of Wisconsin-Madison, Stoughton, Wisconsin 53589
G. Margaritondo
Affiliation:
Synchrotron Radiation Center and Department of Physics, University of Wisconsin-Madison, Stoughton, Wisconsin 53589
Get access

Abstract

Photoemission EXAFS (PEXAFS) studies of InP(110), InP(110) + 1 Å Al and InP(110) + 3 Å Al are presented. In each case, photoemission from the P 2p core-level was monitored using a cylindrical mirror analyzer by a two-point CIS (constant-initial-state spectroscopy) method in 150–280 eV photon energy range. The data were analyzed by conventional Fourier analysis procedures using the theoretical phase function of McKale et al. plus absorber phase function of Teo and Lee. No diffraction effect other than EXAFS is observed. For the clean InP(110) surface, the PEXAFS results show relaxation (contraction) of the surface in excellent agreement with the LEED results. But a small contraction in the P-P bond length (surface unit mesh parameter, a0) has also been measured, which was not reported in the LEED studies. For the InP(110) surface covered with 1 Å Al, metal (cluster)-induced surface structural changes in the substrate are determined which include removal of relaxation of the surface unit mesh in combination with change in the P-In bond length within the surface unit mesh. At the 3 Å Al-coverage on the InP(110) surface, the interface resembles AlP.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] “The Structure of Surfaces II”, edited by Veen, J. F van der and Hove, M. A. (Springer-Verlag, New York, 1988).Google Scholar
[2] Williams, R. H. in “Physics and Chemistry of III–V Compound Semiconductor Surfaces”, edited by Wilmsen, C. W. (Plenum, New York, 1985).Google Scholar
[3] Meyer, R. J., Duke, C. B., Paton, A., Tsang, J. C., Yeh, J. L., Kahn, A. and Mark, P., Phys. Rev. B22, 6171 (1980).CrossRefGoogle Scholar
[4] Stöhr, J., Jaeger, R. and Brennan, S., Surf. Sci. 117, 503 (1982).CrossRefGoogle Scholar
[5] Rossi, G., in “Semiconductor Interfaces: Formation and Properties”, edited by Lay, G. Le et al. (Springer-Verlag, New York, 1987), p.69.CrossRefGoogle Scholar
[6] Tromp, R. M., Loenen, E. J. van, Hamers, R. J. and Demuth, J. E., in “The Structure of Surfaces Ir”, edited by Veen, J. F. van der and Hove, M. A. Van (Springer-Verlag, New York, 1988), p. 282.Google Scholar
[7] Robinson, I. K., in “The Structure of Surfaces”, edited by Hove, M. A. Van and Tong, S. Y. (Springer-Verlag, New York, 1985).Google Scholar
[8] (a) Hill, D. M., Xu, F., Lin, Zhangda and Weaver, J. H., Phys. Rev. B38, 1893 (1988); (b) J. J. Joyce, M. Grioni, M. del Giudice, M. W. Ruckman, F. Boscherini and J. H. Weaver, J. Vac. Sci. Technol. AS, 2019 (1987); F. Xu, D. M. Hill, Zhangda Lin, S. G. Anderson and J. H. Weaver, Phys. Rev. B33, 10295 (1988).Google Scholar
[9] Brillson, L. J., Brucker, C. F., Katnani, A. D., Stoffel, N. G., Daniels, R. and Margaritondo, G., in “Surfaces and Interfaces: Physics and Electronics”, edited by Bauer, R. S. (North-Holland, Amsterdam, 1983), p. 212.Google Scholar
[10] (a) Spicer, W. E., Kendelewicz, T., Newman, N., Chin, K. K. and Lindau, I., Surf. Sci. 168, 240 (1986); (b) I. Lindau et al., Surf. Sci. 162, 591 (1985).CrossRefGoogle Scholar
[11] Lee, P. A., Citrin, P. H., Eisenberger, P. and Kincaid, B. M., Rev. Mod. Phys. 53 769 (1981).Google Scholar
[12] Lee, P. A., Phys. Rev. B13, 5261 (1976).Google Scholar
[13] Sagurton, M., Bullock, E. L. and Fadley, C. S., Surf. Sci. 182, 287 (1987).Google Scholar
[14] Terminello, L. J., Zhang, X. S., Huang, Z. Q., Kim, S., Wittenau, A. E. Schach von, Leung, K. T. and Shirley, D. A., Phys. Rev. B38, 3879 (1988).Google Scholar
[15] Margaritondo, G. and Stoffel, N. G., Phys. Rev. Lett. 42, 1567 (1979).CrossRefGoogle Scholar
[16] Rothberg, G. M., Choudhary, K. M., Boer, M. L. den, Williams, G. P., Hecht, M. H. and Lindau, I., Phys. Rev. Lett..53, 1183 (1984).Google Scholar
[17] Choudhary, K. M., Kim, S. T., Lee, J. H., Shah, S. N., denBoer, M. L., Williams, G. P. and Rothberg, G. M., J. Phys. (Paris) Colloq. 47, C8203 (1986).Google Scholar
[18] For InP(l 10) and InP(110) + 3 Å Al, the PEXAFS results have been published. Choudhary, K. M., Mangat, P. S., Miller, A. E., Kilday, D., Flipponi, A. and Margaritondo, G., Phys. Rev. B38, 1566 (1988).Google Scholar
[19] Choudhary, K. M., Mangat, P. S., Starnberg, H. I., Hurych, Z., Kilday, D. and Soukiassian, P., Phys. Rev. B, accepted as a Rapid Communication.Google Scholar
[20] Choudhary, K. M., Mangat, P. S., Starnberg, H., Hurych, Z. and Soukiassian, P., to be presented in this Meeting, Symposium D: Advanced Techniques for Characterizing Surfaces/Interfaces of Materials.Google Scholar
[21] This paper. Also see Ref. [20].Google Scholar
[22] Brillson, L. J., Brucker, C. F., Katnani, A. D., Stoffel, N. G., Daniels, R. and Margaritondo, G., J. Vac. Sci. Technol. 21, 564 (1982).Google Scholar
[23] Te-X Zhao, Daniels, R. R., Katnani, A. D. and Margaritondo, G., J. Vac. Sci. Technol. B1, 610 (1983).Google Scholar
[24] Hecht, M. H. and Lindau, I., Nucl. Inst. Methods 195, 339 (1982).Google Scholar
[25] McKale, A. G., Veal, B. W., Paulikas, A. P., Chan, S. K. and Knapp, G. S., J. Am. Chem. Soc. (to be published).Google Scholar
[26] Teo, B. K. and Lee, P. A., J. Am. Chem. Soc. 101, 2815 (1979).Google Scholar
[27] “Crystal Structures”, edited by Wyckoff, R. W. G., 2nd ed. (Wiley, New York, 1964).Google Scholar
[28] Kahn, A., Bonapace, C. R., Duke, C. B. and Paton, A., J. Vac. Sci. Technol. B1, 613 (1983).Google Scholar