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Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited by PECVD

Published online by Cambridge University Press:  21 February 2011

F. Demichelis ,
C. F. Pirri ,
E. Tresso ,
G. Dellamea ,
V. Rigato  and
P. Rava
F. Demichelis
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24 – 10129 Torino (Italy)
C. F. Pirri
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24 – 10129 Torino (Italy)
E. Tresso
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24 – 10129 Torino (Italy)
G. Dellamea
Affiliation:
Laboratori INFN - Via Romea 4 Legnaro e Unita' INFM Padova (Italy)
V. Rigato
Affiliation:
Laboratori INFN - Via Romea 4 Legnaro e Unita' INFM Padova (Italy)
P. Rava
Affiliation:
Elettrorava S.p.A - Via Don Sapino 120 Savonera Torino (Italy)
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Abstract

Experimental results on a systematic investigation on the elemental composition, structural, optical and electrical properties of undoped and doped microcrystalline silicon carbide films deposited by Plasma Enhanced Chemical Vapor Deposition.

The doped samples show high values of dark conductivity accompanied by good optical properties so to satisfy the requirements for heterojunction window material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 413
Copyright
Copyright © Materials Research Society 1991

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References

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