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Preparation and Properties of Gallium Phosphide Doped by Rare-Earth Elements

Published online by Cambridge University Press:  21 February 2011

Sergei L. Pyshkin  and
Alberto Anedda
Sergei L. Pyshkin
Affiliation:
Institute of Applied Physics, Academy of Sciences, Academy Str.5, 277028 Kishinev, Moldova
Alberto Anedda
Affiliation:
Department of Physics, University of Cagliari, Ospedale Str. 72, 1-09124 Cagliari, Italy
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Abstract

GaP single crystals have been grown from 5at.% solution of P in Ga with (0.01-0.1)at.% of La, Sm or Gd as dopants. Electric properties, photoconductivity and luminescence of the crystals have been investigated by standard methods.

Energy levels of impurities, mobility and concentration of current carriers have been determined in wide temperature region. It was shown that nitrogen (N) and other uncontrolled impurities present in the crystals due to some peculiarities of crystal growth. The intrinsic RE impurity luminescent spectra can be seen only together with spectra of excitons bounded on N traps. The evaluation of quantum eficiency for RE impurity made on the base of luminescence decay measurements gives the value close to 1. The interpretation of GaP:RE luminescence spectra is presented as intrashell transitions activated by bound exciton recombination as well as D-A and D-valency band transitions between some contaminating impurity (donor) and RE element (acceptor).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 207
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Bell, R., J.Appl.Phys. 34, 1563 (1963)Google Scholar
2. Pyshkin, S.L., DAN SSSR 219, No.6, 1345 (1974), [Sov.Doklady 219 (1974)]Google Scholar
3. Pyshkin, S.L. et al. Fiz. Tekn. Poluprovodn. 1, 1013 (1967), [Sov. Phys. Semicond. 1 (1967)]Google Scholar
4. Ashkinadze, B.M., Pyshkin, S.L. et al. Fiz. Tekn. poluprovodn. 1, 1017 (1967) [Sov. Phys. Semicond. 1 (1967)]Google Scholar
5. , McDougall and Stoner, E., Phil. Trans. R. Soc. A237, 67 (1938)Google Scholar
6. Pyshkin, S.L. et al. , Opto-Electronics 2, 245 (1970)Google Scholar
7. Pyshkin, S.L., Fiz. Tekn. Poluprovodn. 8, 1397 (1974), [Sov. Phys. Semicond. 8 (1974)]Google Scholar
8. Kovarsky, V.A. and Pyshkin, S.L., Bull. Hold. Ac. Scie. 12, 63 (1968)Google Scholar
9. Haga, E. and Kimura, H., J. Phys. Soc. Jap. 19, No.5, 658 (1964)Google Scholar
10. Kleirman, D.A. and Spitzer, W.G., Phys. Rev. 118, 110 (1960)Google Scholar
11. Oswald, F., Z. Naturforsch. 10A, 927 (1957)Google Scholar
12. Kleinman, D.A., Phys. Rev. 118, 118 (1960)Google Scholar
13. Aigrain, P. and Balkanski, M. in Selected Constants Relative to Semicond. (Pergamon, New York, 1961)Google Scholar
14. Ashkinadze, B.M., Kretsu, I.P., Pyshkin, S.L. et al. , Fiz. Tverd. Tela, 10, 3681 (1968), [Sov. Phys. Solid State, 10 (1968]Google Scholar
15. Goerlich, P., Karras, H., G.Koetitz and Leman, R., Phys. stat. sol. 5, No.3, 454 (1964)Google Scholar