Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-30T01:06:56.427Z Has data issue: false hasContentIssue false
  • English
  • Français

Process and Equipment Issues in Rapid Thermal Oxidation (RTO)

Published online by Cambridge University Press:  28 February 2011

Sandeep Mehta Sandeep Mehta  and
David Hodul David Hodul
Sandeep Mehta Sandeep Mehta
Affiliation:
Varian Associates, Inc., Extrion Division, Dory Road, Gloucester, MA 01930
David Hodul David Hodul
Affiliation:
Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303
Get access

Abstract

Thin oxides with thicknesses in the range of 150 to 300Å were grown on lOO-mm <100> Si wafers in a commercial RTP reactor. Growth temperatures and times were llO0-1200°C for 60-180 seconds in 100% 02 at 1 atmosphere. Oxide thickness uniformity was measured using ellipsometry; contour maps of thickness uniformity will be presented. The standard deviation wascalculated to be 2-2.5% within 5 mm of the edge using a method which weights the area represented by each of 45 data points per wafer. In order to correct for dynamic changes in temperature uniformity, a new annealing method was developed.Results on wafer-to-wafer uniformity will be presented. Improvements achieved by post-oxidation annealing in N2 and electrical uniformity of films will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 95
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mehta, S, Russo, C. J. and Hodul, D. T.. Proc. SPIE Conference, Los Angeles, CA, January 1986; Varian SEG Report No.85.Google Scholar
2. Mehta, S., Hodul, D.T. and Russo, C.J., Proc.6thIntl.Conference on Ion Implantation Technology, Berkeley, CA (1986).Google Scholar
3. Mehta, S and Hodul, D. T., SemiCon East '86 Exhibit Technical Sessions, Boston, MA (1986); Varian SEG Report No.109.Google Scholar
4. Gat, A and Nulman, J., Semiconductor International (May 1985).Google Scholar
5. Ang, S. T. and Wortman, J. J., J. Electrochem. Soc. 133, 2361 (1986).Google Scholar
6. Sato, Y and Kiuchi, K., J. Electrochem. Soc. 133, 652 (1986).Google Scholar
7. Moslehi, M. M, Chatas, S. C. and Saraswat, K., Appl. Phys. Lett. 47, 1353 (1985).Google Scholar
8. Nulman, J, Krusius, J. P. and Gat, A., IEEE EDL-6, 205 (1985).Google Scholar
9. Moslehi, M, Saraswat, K. C. and Shatas, S. C., Proc. SPIE Conf., Los Angeles, CA (January 1986).Google Scholar
10. Nulman, J. and Krusius, J. P., Appi. Phys. Lett. 47, 148 (1985).Google Scholar
11. Nulman, J, Tech., S. S. April 1986, 189 (1986).Google Scholar
12. See references in Hodul Mehta, this proceeding.Google Scholar
13. Yang, K. H., J. Electrochem. Soc. 131, 1140 (1984).Google Scholar
14. Kern, W, RCA Engineer 28-4(July/August 1983).Google Scholar
15. Nguyen, T. and Quinlan, D. L., Mat. Res. Soc. Symp. Proc. 71, 505 (1986).Google Scholar
16. Lee, J, Tung, C. Y., Hahn, S. and Chiao, P., Mat. Res. Soc. Symp. 71, 499 (1986).Google Scholar
17. Carmin, A. H. and Sinclair, R., J. Electrochem. Soc. 133, 741 (1987).Google Scholar
18. Ravindra, N. M., Narayan, J., Fathy, D., Srivastava, J. K. and Irene, E. A., J. Matls. Res, in press.Google Scholar
19. Ohdomari, I, Mihara, T. and Kai, K., J. Appi. Phys. 60, 3900 (1986).Google Scholar
20. Nulman, J, Krusius, N. P. and Rathbun, L., Proc. IEEE-IEDM 84–169 (1984).Google Scholar
21. Weinberg, A., Young, D. R., Chalise, J. A., Cohen, S. A., DeLuca, J. C. and Deline, U. R., Appl. Phys. Lett. 45, 1204 (1984).Google Scholar
22. Mountain, D. J., Galloway, K. F. and Russel, T. J., J. Electrochem. Soc. 134, 747 (1987).Google Scholar
23. Ravindra, N. M., Fathy, D., Narayan, J., Srivastava, J. K. and Irene, E. A., Materials Letter 4, 337 (1986).Google Scholar
24. Bhattacharya, A, Vorst, C., Carim, A. H., J. Electrochem. Soc. 132, 1900 (1985).Google Scholar
25. Chen, C. F. and Wu, C-Y., Appl. Phys. Lett. 48, 165 (1986).Google Scholar
26. Vasquez, R. P., Madhukar, A., Grunthaner, F. J. and Nainam, M. L., J. Appl.Phys. 59, 972 (1986).Google Scholar
27. Yo-ung, E. M. and Tiller, W. A., Appl. Phys. Lett. 50, 46 (1987).Google Scholar
28. Kuczynski, G. C. and Hochman, R. F., Phys. Rev. 108, 946 (1957).Google Scholar