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Self-poling Effects in Sol-gel Derived Pb(Zr1-xTix)O3 Thin Films

Published online by Cambridge University Press:  11 February 2011

Jinrong Cheng
Affiliation:
Material Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Nan Li
Affiliation:
Material Research Laboratory, The Pennsylvania State University, University Park, PA 16802
L. Eric Cross
Affiliation:
Material Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Zhongyan Meng
Affiliation:
School of Mater. Sci. and Eng., Shanghai University, Shanghai 201800, P.R. China
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Abstract

Based on the direct piezoelectric effect, the measurement of piezoelectric module d33 was conducted to examine the self-poling effect in sol-gel derived Pb(Zr1-xTix)O3 (PZT) thin films. It is observed that as-prepared PZT thin films have piezoelectric responses being dependent upon the film thickness and composition. The higher d33 of 26 pC/N is achieved for ∼0.4 μm thick PZT thin films with Zr/Ti ratio of 53/47. The d33 value decreases with increasing the film thickness for as-prepared PZT thin films, however, increases for the same film after external poling. The origin of the self-poling effect was briefly discussed based on the formation of an internal bias field in PZT thin films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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