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SiC Film Deposited by Pulsed Excimer Laser Ablation

Published online by Cambridge University Press:  16 February 2011

R. J. Tench ,
M. Balooch ,
A. L. Connor ,
L. Bernardez ,
B. Olson ,
M. J. Allen ,
W. J. Siekhaus  and
D. R. Olander
R. J. Tench
Affiliation:
Lawrence Livermore National Laboratory Livermore, California 94550
M. Balooch
Affiliation:
Lawrence Livermore National Laboratory Livermore, California 94550
A. L. Connor
Affiliation:
Lawrence Livermore National Laboratory Livermore, California 94550
L. Bernardez
Affiliation:
Lawrence Livermore National Laboratory Livermore, California 94550
B. Olson
Affiliation:
Lawrence Livermore National Laboratory Livermore, California 94550
M. J. Allen
Affiliation:
Lawrence Livermore National Laboratory Livermore, California 94550
W. J. Siekhaus
Affiliation:
Lawrence Livermore National Laboratory Livermore, California 94550
D. R. Olander
Affiliation:
Nuclear Engineering Department, University of California Berkeley, CA 94720
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Abstract

Thin films of β- SiC were grown on Si substrates by excimer laser pulse ablation of bulk SiC. The films were examined by Auger electron, X-ray, and photoelectron spectroscopies. The film was smooth as monitored by scanning electron microscopy. Scanning electron and scanning tunneling microscopy showed inclusions in the deposited SiC film and laser ionization mass analysis detected SiC dimers in the vapor plume emitted from the target.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 191: Symposium N – Laser Ablation for Materials Synthesis , 1990 , 61
Copyright
Copyright © Materials Research Society 1990

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References

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