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The surfactant effects of antimony on the formation of InAsSb nanostructures on GaAs by metal-organic chemical vapor deposition

Published online by Cambridge University Press:  11 February 2011

J.G. Cederberg  and
R.M. Biefeld
J.G. Cederberg
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM, 87185–0601
R.M. Biefeld
Affiliation:
Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM, 87185–0601
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Abstract

We have investigated InAsSb nanostructures formed on GaAs during MOCVD. The transition thickness from 2D growth to 3D growth is reduced by the addition of TMSb/Sb4. This is consistent with both an increase in the adatom diffusion length and a reduction in the epilayer/vapor surface energy attributed TMSb/Sb4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W2.6
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Shchekin, O.B., Deppe, D.G., Appl. Phys. Lett., 80, 3277, (2002).Google Scholar
2. Ledentsov, N.N., et al., Semiconductor Sci. Tech., 15, 604, (2000).Google Scholar
3. Horn-von Hoegen, M. Müller, B.H., Al-Falou, A., Phys. Rev. B, 50, 11640. (1994).Google Scholar
4. van der Vegt, H.A., et al., Phys. Rev. Lett., 68, 3335, (1992).Google Scholar
5. Tersoff, J., Denier van der Gon, A.W., Tromp, R.M., Phys. Rev. Lett., 72, 266, (1994).Google Scholar
6. Shurtleff, J.K., et al., J. Crystal Growth, 234, 327, (2002).Google Scholar
7. Sun, S.W., Stringfellow, G.B., Shurtleff, J.K., Lee, R.-T., J. Crystal Growth, 235, 15, (2002).Google Scholar
8. Chan, L.H., Altman, E.I., Phys. Rev. B., 63, 195309, (2001).Google Scholar
9. Chan, L.H., Altman, E.I., Surf. Sci., 511, 229, (2002).Google Scholar
10. Snyder, C.W., Orr, B.G., Munekata, H., Appl. Phys. Lett., 62, 46, (1993).Google Scholar
11. Passaseo, A., et al., J. Appl. Phys., 89, 4341, (2001).Google Scholar
12. Leon, R., Lobo, C., Zou, J., Romeo, T., Cockayne, D.J.H., Phys. Rev. Lett., 81, 2486, (1998).Google Scholar
13. Riel, B.J., et al., J. Crystal Growth, 236, 145, (2002).Google Scholar
14. Yamashiki, A., Nishinaga, T., J. Crystal Growth, 198/ 199, 1125, (1999).Google Scholar