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Thermal Plasma Physical Vapor Deposition of Nanostructured SiC Coatings

Published online by Cambridge University Press:  11 February 2011

Xinhua Wang ,
Keisuke Eguchi ,
Atsushi Yamamoto  and
Toyonobu Yoshida
Xinhua Wang
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-Ku, Tokyo 113–8656, Japan
Keisuke Eguchi
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-Ku, Tokyo 113–8656, Japan
Atsushi Yamamoto
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, Hongo 7–3–1, Bunkyo-Ku, Tokyo 113–8656, Japan
Toyonobu Yoshida
Affiliation:
National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
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Abstract

Nanostructured and thick SiC coatings have been successfully deposited on Si and graphite substrates by thermal plasma physical vapor deposition (TPPVD) using ultrafine SiC powder as a starting material. The control of processing parameters such as substrate temperature, composition of plasma gases, permits to the deposition of SiC coatings with a variety of microstructures and with various morphologies from dense to columnar. The maximum deposition rate reached 200 nm/s. Seebeck coefficient up to −480 μV/K was obtained for the non-doped coatings with stoichiometric composition. Nitrogen doping to the coatings made it possible to decrease the electrical resistivity from 10-2∼10-3 to 10-4∼10-5 Ωm and showing the maximum power factor of 1.0×10-3 Wm-1K-2 at 973 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.19
Copyright
Copyright © Materials Research Society 2003

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References

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