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Thin Ferroelectric Film between Double Schottky Barriers

Published online by Cambridge University Press:  01 February 2011

Lyuba A. Delimova ,
Igor V. Grekhov ,
Dmitri V. Mashovets ,
Sangmin Shin ,
June-Mo Koo ,
Suk-Pil Kim  and
Youngsoo Park
Lyuba A. Delimova
Affiliation:
Solid State Electronics Division, Ioffe Physicotechnical Institute RAS, Politekhnicheskaya 26, St.Petersburg 194021, Russian Federation.
Igor V. Grekhov
Affiliation:
Solid State Electronics Division, Ioffe Physicotechnical Institute RAS, Politekhnicheskaya 26, St.Petersburg 194021, Russian Federation.
Dmitri V. Mashovets
Affiliation:
Solid State Electronics Division, Ioffe Physicotechnical Institute RAS, Politekhnicheskaya 26, St.Petersburg 194021, Russian Federation.
Sangmin Shin
Affiliation:
Materials & Devices Laboratory, Samsung Advanced Institute of Technology, Suwon 440–600, Korea.
June-Mo Koo
Affiliation:
Process Engineering Laboratory, Samsung Advanced Institute of Technology, Suwon 440–600, Korea.
Suk-Pil Kim
Affiliation:
Process Engineering Laboratory, Samsung Advanced Institute of Technology, Suwon 440–600, Korea.
Youngsoo Park
Affiliation:
Process Engineering Laboratory, Samsung Advanced Institute of Technology, Suwon 440–600, Korea.
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Abstract

Thin-film uniform metal-ferroelectric-metal (M/F/M) structure between back-to-back Schottky barriers (SBs) is considered. The ferroelectric is assumed to be a p-type semiconductor, and the film thickness is far less than the depletion layer induced by the S.B. Numerical integration of the Poisson equation is used to analyze the influence of double Shottky barriers on the distributions of the electric field, potential, and polarization across the film thickness as functions of external bias and the film electrical history. The range of structure parameters is determined, where the Poisson equation for M/F/M structure can be solved analytically providing an obvious and easy-to-interpret representation of the M/F/M behavior. Electric fields induced by back-to-back SBs under zero external bias compensate each other to a great extent. As a result, the potential across the ferroelectric film remains virtually unchanged providing the flat-band condition in the energy diagram of zero-biased M/F/M structure; in fact, the external bias applied to M/F/M structure exerts influence only on the reverse-biased barrier.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D3.19
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Evans, J. T. and Womack, R., IEEE J. Solid State Circuits SSC–23, 1171 (1988).Google Scholar
2. Eaton, S. S., Butler, D. B., Parris, M., Wilson, D. and McNellie, H., Proc. IEEE Int.Solid State Circuits Conf. (1988) p. 130.Google Scholar
3. Schottky, W., Phys. Z. 41, 570 (1940).Google Scholar
4. Blom, P. W. M., Wolf, R. M., Cillessen, J. F. M., and Krijn, M.P. C. M., Phys. Rev. Lett 73, 2107 (1994).Google Scholar
5. Baudry, L., J. Appl. Phys. 86, 1096 (1999).Google Scholar
6. Yukio Watanabe, J. Appl. Phys. 83, 2179 (1998).Google Scholar
7. Sze, S. M., Coleman, D. J. Jr, and Loya, A., Sol. St. Electron. 14, 1209 (1971).Google Scholar
8. Prisedsky, V. V., Shishkovsky, V. I., Klimov, V. V., Ferroelectrics, 17, pp. 465–468, (1978).Google Scholar
9. Lang, I. G., Firsov, Y. A., Fiz. Tverd. Tela, 5, pp.2799–2817, (1965).Google Scholar
10. Watanabe, Yukio, Phys. Rev. B, 57, pp. R5563-R5566, (1998-II)Google Scholar
11. Miller, S., and McWhorter, P., J. Appl. Phys. 72, 5999 (1992).Google Scholar