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Two-stage Laser Thermal Processing of Nanoparticle Inks on Flexible Substrates for High Performance Electronics

Published online by Cambridge University Press:  11 August 2011

Michael H. Willemann  and
Michael O. Thompson
Michael H. Willemann
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Zinc oxide is a promising semiconductor film for active devices on flexible substrates, and synthesis routes using nanoparticle inks enable greater variety of applications. We introduce and characterize a two-step transient laser annealing process to create fully densified zinc oxide films from nanoparticle ink precursors. A low temperature sub-millisecond calcining step to remove solvent and organic stabilizing ligands was followed by a high-temperature pulsed laser sintering step to form densified 50-100 nm thin films with resistivities of 10-1 to 10-3 Ω-cm. Film microstructures can be varied between crystalline and amorphous without significant film damage by adjusting the fluence of the high-temperature sintering step. These processes would be compatible with a variety of nanoparticle species, deposition methods, and patterning methods, including roll-to-roll processing paradigms.

Keywords

laser annealingelectronic materialthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1340: Symposium T – High-Speed and Large-Area Printing of Micro/Nanostructures and Devices , 2011 , mrss11-1340-t05-04
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Puetz, J. and Aegertera, M.A., Thin Solid Films 516, 4496 (2008).CrossRefGoogle Scholar
2. Lee, H.H., Chou, K.S. and Huang, K.C., Nanotechnology 16, 2436 (2005).CrossRefGoogle Scholar
3. Gamerith, S., et al. ., Advanced Functional Materials 17, 3111 (2007).CrossRefGoogle Scholar
4. Jun, J.H., Park, B., Cho, K. and Kim, S., Nanotechnology 20, 505201 (2009).CrossRefGoogle Scholar
5. Leea, S., Jeonga, S., Kima, D., Parka, B. K. and Moon, J., Superlattices and Microstructures 42, 361 (2007).CrossRefGoogle Scholar
6. Carey, P.G., Smith, P.M., Thompson, M.O. and Sigmon, T.W. in Polysilicon thin film transistors fabricated at 100 degrees C on a plastic substrate (55th Annual Device Research Conference Digest, Fort Collins, CO, 1997) p. 58.Google Scholar
7. Choi, J. J., et al. ., Nano Letters, 9(11), 3749 (2009).CrossRefGoogle Scholar
8. Bruice, P.Y. in Organic Chemisty, 5 th ed. (Pearson Prentice Hall, Uppers Saddle River, NJ) p. 530.Google Scholar