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X-Ray Absorption at Si K-Edge for Novel Compounds in the Ternary System Si-C-N
Published online by Cambridge University Press: 15 February 2011
Abstract
We present results of Si K-edge XANES-investigations for novel Si-C-N containing solid phases prepared by annealing of Si(NCN)2 at temperatures between room temperature (RT) and 1600°C. The chemical equivalence of the NCN-group arid oxygen as a ligand of silicon is confirmed. The spectra show the presence of an intermediate crystalline phase and its decomposition. Furthermore the recrystallisation of a Si3N4/SiC composite material and its dependence on temperature can be seen.
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- Copyright © Materials Research Society 1996
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